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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Liu, Shih-ChienSubject: search.filters.subject.high-electron mobility transistors (HEMTs)

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    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
  • Thumbnail Image
    Item type:Item,
    Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
    (2014-07-01)
    Tsai, Szu-Ping
    ;
    Hsu, Heng-Tung
    ;
    Chiang, Che-Yang
    ;
    Tu, Yung-Yi
    ;
    Chang, Chia-Hua
    We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.