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Author: search.filters.author.Lu, Tien-ChangSubject: search.filters.subject.light emitting diode (LED)

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Now showing 1 - 3 of 3
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    Room Temperature Current Injection Polariton Light Emitting Diode with a Hybrid Microcavity
    (2011-07-01)
    Lu, Tien-Chang
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    Chen, Jun-Rong
    ;
    Lin, Shiang-Chi
    ;
    Huang, Si-Wei
    ;
    Wang, Shing-Chung
    The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electro-dynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.
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    GaN-based microcavity polariton light emitting diodes
    (2012)
    Lu, Tien-Chang
    ;
    Lai, Ying-Yu
    ;
    Huang, Si-Wei
    ;
    Chen, Jun-Rong
    ;
    Wu, Yung-Chi
    Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.
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    Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
    (2007-01-25)
    Huang, Hung-Wen
    ;
    Kao, Chih-Chiang
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    Chu, Jung-Tang
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    Wang, Wei-Chih
    ;
    Lu, Tien-Chang
    The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm(2) was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. (c) 2006 Elsevier B.V. All rights reserved.