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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Luo, JSHas files: No

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    Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films
    (1997-10-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Tsai, WC
    ;
    電子工程學系及電子研究所
    Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24 For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1-0.3 J/cm(2) nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm(2) cellular structures of Ge-deficient S1-xGex islands surrounded by Ni(Si1-xGex)(2) due to the constitutional supercooling occurred. For the continuous Ni(Si1-xGex) films grown at 200 degrees C, subsequent laser annealing at a higher energy density of 0.6-1.0 J/cm(2) caused transformation into homogeneous Ni(Si0.76Ge0.24)(2) films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 degrees C. At energy densities above 1.6 J/cm(2) the same cellular structures as described above were also noted. (C) 1997 American Institute of Physics.
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    Item type:Item,
    Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing
    (1998-09-07)
    Chen, DR
    ;
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1-0.4 J/cm(2), a continuous germanosilicide layer composed of a low-temperature phase, Pd-2(Si1-xGex), and a high-temperature phase, Pd(Si1-xGex), was formed. Incontrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm(2). Multiple pulse annealing at 0.1 J/cm(2) could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1-xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 degrees C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm(2) with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. (C) 1998 American Institute of Physics. [S0003-6951(98)04136-9].
  • Thumbnail Image
    Item type:Item,
    Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films
    (1997-10-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Tsai, WC
    ;
    電子工程學系及電子研究所
    Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24 For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1-0.3 J/cm(2) nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm(2) cellular structures of Ge-deficient S1-xGex islands surrounded by Ni(Si1-xGex)(2) due to the constitutional supercooling occurred. For the continuous Ni(Si1-xGex) films grown at 200 degrees C, subsequent laser annealing at a higher energy density of 0.6-1.0 J/cm(2) caused transformation into homogeneous Ni(Si0.76Ge0.24)(2) films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 degrees C. At energy densities above 1.6 J/cm(2) the same cellular structures as described above were also noted. (C) 1997 American Institute of Physics.