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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Luo, JSSubject: search.filters.subject.C+ implantation

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    Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
    (1999-07-15)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    Pan, FM
    Epitaxial Si1-x-yGexCy films have been grown by C+ implantation into Si0.76Ge0.24 films with a dose of 1.0 x 10(16)/cm(2) and subsequent pulsed KrF laser annealing at an energy density of 0.3-1.6 J/cm(2). Upon laser annealing Ce segregation to the film surface and diffusion to the underlying Si appeared at energy densities above 0.8 J/cm(2) and 1.4 J/cm(2), respectively while the depth profiles of C remained nearly unchanged as in the as-implanted Si1-x-yGeyCy film. Concurrently, no SiC and twin were observed. The amount of C incorporated into substitutional sites initially increased with the energy density in the range of 0.3-1.0 J/cm(2), and then saturated at an energy density of 1.0-1.6 J/cm(2). For the Si1-x-yGexCy films grown at 1.0 J/cm(2) for 5 and 20 pulses SiC was formed with its amount increasing with the pulse number because of C segregation to the film surface and the original amorphous/crystal interface where the EOR defects were present. For the Si1-x-yGexCy films grown at energy densities below 1.0 J/cm(2) the reduction of tensile stress mainly resulted from the effect of substitutional carbon incorporation. (C) 1999 Elsevier Science S.A. All rights reserved.