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Author: search.filters.author.Meng, CCSubject: search.filters.subject.GaInP/GaAs HBT

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    Determining GaInP/GaAs HBT device structure by DC measurements on a two-emitter HBT device and high frequency transit time measurements
    (2005-06-01)
    Meng, CC
    ;
    Tsou, BC
    ;
    Tseng, SC
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A method to monitor the GaInP/GaAs HBT device structure including emitter ledge thickness is demonstrated in this paper. The base thickness and base doping density are obtained through base transit time and base sheet resistance measurements while the base transit time is measured through the cut-off frequency measurements at various bias points. A large size two-emitter HBT device is used to measure the ledge thickness. Emitter doping profile and collector doping profile are obtained by the large size HBT device through C-V measurements. An FATFET device formed by two emitters as drain and source terminals and the interconnect metal as the on-ledge Schottky gate between two emitters is used to measure the ledge thickness.
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    A modified HICUM model for GaInP/GaAs HBT devices
    (2006-04-01)
    Tseng, SC
    ;
    Meng, CC
    ;
    Chen, WY
    ;
    Su, JY
    ;
    電信工程研究所
    A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (I-C, V-CE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (I-C, V-CE) more precisely. This model has obvious advantages over the VBIC model for showing the relation oj'f, versus bias (I-C, V-CE) in the low and medium current regimes for GaInP/GaAs HBT devices. (c) 2006 Wiley Periodicals, Inc.
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    5.2-GHz GaInP/GaAs HBT cascode LNA with 5.5 dB gain enhancement using inter-stage LC matching
    (2006-08-01)
    Meng, CC
    ;
    Jhong, JC
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A gain boosting method without noise-figure degradation by optimizing interstage matching in a coscode low-noise amplifier (LNA) with emitter-degeneration inductor is demonstrated at 5.2 GHz using 2-mu m GaInP/GaAs HBT technology. A low-pass LC matching network is inserted in the interstage of a conventional cascode LNA with emitter-degeneration-inductor to enhance the gain with the same current consumption. The 2-mu m GaInP/GaAs HBT LNA without interstage matching has 14-dB power gain and 2.37-dB noise figure at 5.2 GHz while the 2-mu m GaInP/GaAs HBT LNA with interstage matching has 19.5-dB power gain and 2.22-dB noise figure at 5.2 GHz. The current consumption is 2.3 mA and voltage supply is 3.6 V. (c) 2006 Wiley Periodicals, Inc.