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Now showing 1 - 10 of 29

A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
(2003-01-20)
Meng, CC
;
Chiang, MH
;
Wu, TH
;
電信工程研究所
;
Institute of Communications Engineering
A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
DC to 8 GHz 11 dB gain Gilbert micromixer using GaInP/GaAs HBT technology
(2003-04-17)
Meng, CC
;
Lu, SS
;
Chiang, MH
;
Chen, HC
;
電信工程研究所
A wideband GaInP/GaAs heterojunction bipolar transistor (HBT) micromixer from DC to 8 GHz with I I dB single-ended conversion gain is demonstrated. The input return loss is better than 10 dB for frequencies up to 9 GHz. The single-to-differential input stage in a Gilbert micromixer renders good wideband frequency response and eliminates the need for common-mode rejection. IP1dB = -17 dBm and IIP3 = -7 dBm are achieved for a small local oscillator power of -2 dBm when LO = 5.35 GHz and PF = 5.7 GHz.
Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate
(2004-02-05)
Meng, CC
;
電信工程研究所
;
Institute of Communications Engineering
The p(+) substrate plays an important role on the edge stability of p(+)n multiquantum well avalanche transit time devices. The p(+)n multiquantum well avalanche transit time devices on n(+) substrate easily burn out along the device edge at low breakdown current. The same structure on p(+) substrate can have the desired band diagram on device edge to eliminate edge burn-out and CW operation is thus achieved at 100.3 GHz. (C) 2004 Wiley Periodicals, Inc.
DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
(2004-03-20)
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-mum SiGe BiCMOS technology is reported. The SiGe HBT used here has f(t) of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1db and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. (C) 2004 Wiley Periodicals, Inc.
A watt-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology
(2004-06-05)
Meng, CC
;
Wang, W
;
電信工程研究所
;
Institute of Communications Engineering
A one-stage hybrid power amplifier integrated with gap-coupled microstrip lines for impedance matching is demonstrated in this work. The gap-coupled microstrip line amplifier module realized here can provide IS-dB power gain, 33.5-dBm output power, and 42% power-added efficiency (PAE) at 2.3 GHZ. The demonstrated topology is suitable in monolithic 1C technology, especially in the millimeter-wave frequency because the gap-coupled microstrip lines can he easily compacted into small size. 2004 Wiley Periodicals, Inc.
A SiGe micromixer for 2.4/5.2/5.7GHz multiband WLAN applications
(2004-06-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A SiGe micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated for the first time. Our experimental results show that the input return loss S-11 is below -18 dB from DC to 20 GHz with voltage gains of 32, 26, and 25 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-1dB = -14 dBm and IIP3 = -6dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. 2004 Wiley Periodicals, Inc.
DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
(2004-10-05)
Meng, CC
;
Wu, TH
;
Lu, SS
;
電信工程研究所
;
Institute of Communications Engineering
High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-Ghz multiband WLAN applications
(2004-10-05)
Wang, CY
;
Lu, SS
;
Meng, CC
;
Lin, YS
;
電信工程研究所
A GaInP/GaAs HBT micromixer for 2.4/5.2/5.7-GHz multiband WLAN applications is demonstrated. Our experimental results show that the input return loss |S-11| is below -25 dB from DC to 10 GHz with power-conversion gains of 11.7, 11.9, and 11.5 dB at frequencies of 2.4, 5.2, and 5.7 GHz, respectively. The wideband matching characteristic makes the micromixer very suitable for multiband applications. Input P-IdB is -4 dBm and IIP3 is 2.36 dBm. Port-to-port isolation is also quite satisfactory. In addition, the single-to-differential input stage in the Gilbert micromixer eliminates the need for common-mode rejection. (C) 2004 Wiley Periodicals, Inc.
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
(2004-11-05)
Meng, CC
;
Lin, MQ
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
A monolithic 5.2-GHz single-ended-in and single-ended-out Gilbert upconverter with balanced operation is demonstrated using 0.18-mum deep n-well CMOS technology. Thefully matched Gilbert upconverter has conversion gain of - 11.5 dB and OPIdB of - 19 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz. The IF input return loss is better than 14 dB for frequencies up to 7 GHz, while RF output return loss is 15 dB at 5.2 GHz. (C) 2004 Wiley Periodicals, Inc.
The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design
(2005-01-01)
Lu, SS
;
Lin, YS
;
Chiu, HW
;
Chen, YC
;
Meng, CC
A method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.

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