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Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs
(2020-01-01)
Meng, Chinchun
;
Chang, Wei-Ling
;
Hsiao, Yu-Chih
;
Li, Meng-Che
;
Chien, Hsin-Yi
This paper presents dual-band 2.4/5-GHz dual-band pHEMT LNAs based on a balanced noise design approach using 0.15 m pHEMT technology. A dual-band LNA has two input match frequencies without simultaneous noise match at these two frequencies especially when the extrinsic loss caused by the inductor is absent. Noise parameters as a function of frequencies for a dual-band FET LNA based on the balanced noise performance are developed. The fully integrated pHEMT LNA achieves power gain of 18 dB at 2.4 GHz and 12 dB at 5 GHz and noise figure about 3 dB at 2.4 GHz and 5 GHz, respectively, at 12.6 mA and 3 V. The pHEMT LNA with a bondwire inductor at input match demonstrates a distinct balanced noise performance.
V-band Sub-Harmonic Gate-Pumped Resistive Mixer With a 180 degrees Hybrid Using an In-Phase Power Divider Merging With an Out-Of-Phase Marchand Balun
(2019-01-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A high isolation gate-pumped resistive sub-harmonic mixer with a miniature 180 degrees hybrid is demonstrated using 90 nm CMOS process. An in-phase power divider and an out-of-phase Marchand balun form a reduced-size 180 degrees hybrid with shared coupled lines. For a sub-harmonic mixer, the input matches at LO/RF ports of the 180 degrees hybrid are achieved using high/low coupling coefficients of the shared equal-length coupled lines. Moreover, isolations between RF and LO ports are achieved at all frequencies because a Marchand balun maintains balanced signals and a power divider provides in-phase equal magnitude signals at all frequencies. The sub-harmonic mixer achieves a conversion gain around 0-3 dB from 58-67 GHz with 0 dBm LO pumping power. The LO-to-RF isolation is better than 36 dB within the operating bandwidth.
pHEMT Single-Voltage-Supply Direct-Conversion Receiver With a 3-10 GHz LC Ladder LNA
(2019-01-01)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Wang, Chia-Ling
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
A 3-10 GHz single-voltage-supply pHEMT direct-conversion receiver with a wideband LC-ladder inductively source-degenerated common-source low-noise amplifier is demonstrated in this paper. A wideband LR-CR LO generator is applied to the Gilbert mixers. The measurement results shows 13 similar to 15 dB conversion gain and 6-10 dB noise figure in the 3-10 GHz operating frequency range while the LO power is about 8 dBm and IF=300 MHz. The current consumption of the receiver is 70 mA at 3.3 V supply voltage.
Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors
(2019-07-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Ni, Jung-Hung
;
Ch, Kai-Chun
;
Chang, Chih-Kai
Analytical noise formulations and design optimization of single- and dual-band inductively source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss effects of on-chip inductors are established in this paper. It reveals that the noise figures of both single-/dual-band LNAs degrade substantially under the consideration of the loss effects. However, by increasing the device size, the noise optimization methodology of simultaneous noise and input match for a single-band LNA still holds true with concern for the loss effects. For a dual-band LNA, analytical noise optimization for a balanced noise design is established for inductors with metal and substrate loss and indicates a larger device size. The substrate and metal loss effects of inductors can be mitigated using integrated passive device (IPD) process for the input match network. The demonstrated single-band 0.18-mu m MOS LNAs with and without IPD process show noise figures of 1.53 and 2.52 dB at 2.4 GHz, respectively. Subsequently, the implemented dual-band 0.18-mu m MOS LNAs with and without IPD process show noise figures of 1.6/2.6 and 3.25/4.1 dB at 2.4/5 GHz, respectively.
Temperature Insensitive PA Bias Circuit With Digital Control Interface Using InGaP/GaAs HBT Technology
(2015-01-01)
Chang, Wei-Ling
;
Meng, Chinchun
;
Wong, Shyh-Chyi
;
Chien, Hwey
;
Huang, Guo-Wei
This paper demonstrates a new temperature insensitive bias circuit using a Wilson current mirror for the InGaP/GaAs HBT power amplifier. The Wilson current mirror has a high impedance node for connecting an on/off digital interface and a stable voltage node for injection of feedback signals to achieve a temperature insensitive bias. The fabricated output stage of the power amplifier with the feedback through the Wilson current source shows a stable bias current with current variation from 186 mA to 182 mA for the temperature range from 25 degrees C to 200 degrees C. A bias circuit without the feedback through the Wilson current source is also fabricated for comparison and shows a strong bias current variation over temperature.
5-6 GHz 9.4 mW CMOS Direct-Conversion Passive-Mixer Receiver With Low-Flicker-Noise Corner
(2012-01-01)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Syu, Jin-Siang
;
Lin, Chung-Yo
;
Wong, Shyh-Chyi
This paper demonstrates a low-power and low-flicker-noise direct-conversion receiver using double-balanced passive mixer. The deep-n-well vertical-NPN bipolar junction transistor is placed as at the input stage of the IF amplifier to reduce the flicker noise in the 0.18 um standard CMOS process. As a result, conversion gain achieves 50-dB gain when the LO power is 10 dBm and the noise figure is 7-dB at 100 kHz. The totally power consumption is 9.4 mW at 1.8 V voltage supply.
2-GHz 1.35-dB NF pHEMT Single-Voltage-Supply Process-Independent Low-Noise Amplifier
(2018-01-01)
Syu, Jin-Siang
;
Meng, Chinchun
;
Yang, Chun
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
A 2-GHz single-voltage-supply 0.15-mu m depletion-mode (D-mode) pseudomorphic high electron-mobility transistor (pHEMT) low-noise amplifier (LNA) is demonstrated with a proposed process-independent self-biasing scheme. The current-reused technique is also employed to achieve a common-source common-drain two-stage LNA under a dc current of 10.85 mA at a 3-V supply. As a result, the proposed LNA achieves 20-dB power gain and 1.35-dB noise figure (NF) at 2 GHz while the minimum NF=1.3 dB occurs at 2.4 GHz.
2.4-GHz Tunable Miniature CMOS Active Bandpass Filter With Two Transmission Zeros Using Lumped Stepped-Impedance Ring Resonator
(2018-01-01)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Chien, Hsieh-Hsiu Chang
;
Huang, Guo-Wei
;
電機工程學系
This paper demonstrates a small-size 2.4-GHz CMOS active bandpass filter with two transmission zeros using a lumped stepped-impedance ring resonator. To obtain low insertion loss and small size, four high-Q active inductors using 0.18 gm CMOS transistors only are employed in the design. The measured insertion loss is 2.9-dB at 2.4 GHz center frequency with two transmission zeros located at 2.1 GHz and 3.1 GHz, respectively. By tuning the bias currents of active inductors, the center frequency has 1.4 GHz tuning range and the 1-dB bandwidth can be adjusted in the range of 190 MHz to 260 MHz. The demonstrated active filter occupies a small chip area of 0.47 mm x 0.33 mm excluding I/O pads and has 24 dB noise figure. Thus, an active filter with a preceding two-stage common-source LNA for suppression of noise of the active filter is also demonstrated and the resulting LNA + active filter has 6 dB noise figure. The power consumption of the active filter core and the LNA core is 9 mW and 7.2 mW, respectively.
Criteria for the evaluation of linear two-port stability using two geometrically derived parameters
(2009-02-01)
Meng, Chinchun
;
Wei, Hung-Ju
;
Sun, Po-Hsing
;
電信工程研究所
;
Institute of Communications Engineering
Two geometrically derived stability parameters, mu' (or mu) and nu' (or nu), are used to analyze the stability of a two-port network. The magnitudes of both mu' (or nu) and nu' (or nu) parameters determine geometrical relations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, vertical bar mu'vertical bar (or vertical bar mu vertical bar) is defined as the minimum distance from the stability circle to the origin of the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, while vertical bar nu'vertical bar (or vertical bar nu vertical bar) is defined as the maximum distance. Moreover, the signs of nu' (or nu) and mu' (or mu) parameters determine which region of the stability circle is stable (inside or outside) and whether the stable region includes the origin of the Smith chart, respectively. There are totally 12 situations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane by using mu' (or mu) and nu' (or nu) parameters. This paper classifies 12 situations in the Gamma(S) plane and also presents the corresponding practical two-port networks.
V-band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplers
(2017-01-01)
Chang, Wei-Ling
;
Su, Jen-Yi
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Huang, Guo-Wei
A V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 mu m GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and inter-stage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP1dB of 12 dBm and P-sat of 15 dBm.

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