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V-band Sub-Harmonic Gate-Pumped Resistive Mixer With a 180 degrees Hybrid Using an In-Phase Power Divider Merging With an Out-Of-Phase Marchand Balun
(2019-01-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A high isolation gate-pumped resistive sub-harmonic mixer with a miniature 180 degrees hybrid is demonstrated using 90 nm CMOS process. An in-phase power divider and an out-of-phase Marchand balun form a reduced-size 180 degrees hybrid with shared coupled lines. For a sub-harmonic mixer, the input matches at LO/RF ports of the 180 degrees hybrid are achieved using high/low coupling coefficients of the shared equal-length coupled lines. Moreover, isolations between RF and LO ports are achieved at all frequencies because a Marchand balun maintains balanced signals and a power divider provides in-phase equal magnitude signals at all frequencies. The sub-harmonic mixer achieves a conversion gain around 0-3 dB from 58-67 GHz with 0 dBm LO pumping power. The LO-to-RF isolation is better than 36 dB within the operating bandwidth.
60-GHz SiGe BiCMOS Dual-Conversion Down-Converter: Schottky Diode RF Mixer and Analog Gilbert IF Mixer with Microwave Quadrature Generator
(2016)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Wei, Hung-Ju
;
Huang, Guo-Wei
;
電機工程學系
A 60 GHz dual-conversion down-converter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. A Schottky diode ring mixer with wideband Marchand balun works as the 60-GHz RF mixer while two analog Gilbert micromixers with LO port pumped by two quadrature couplers work as IF mixers. The cut-off frequency of a Schottky diode makes a fundamental RF ring mixer possible because the series resistance of a Schottky diode is effectively reduced by the n+ buried layer in SiGe BiCMOS process. A Gilbert micromixer with an IF buffer is used to accommodate the single-ended output of the RF ring mixer. By combining these advantages, a dual-conversion down-converter is achieved. The converter has about 8 dB conversion gain, 10 GHz RF bandwidth of 50 - 60 GHz, 100 MHz IF bandwidth when LO1 power is 8 dBm and LO2 power is 2 dBm.
V-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Process
(2015)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Lo, Tai-Lin
;
Huang, Guo-Wei
;
電機學院
A V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.
Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Points
(2014-01-01)
Chang, Wei-Ling
;
Meng, Chinchun
;
Syu, Jin-Siang
;
Wu, Yan-Feng
;
Huang, Guo-Wei
A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.
V-band pHEMT Dual-Conversion Down-Converter With Schottky Diode RF Mixer and Analog Gilbert IF Mixer
(2014-01-01)
Chang, Wei-Ling
;
Meng, Chinchun
;
Chang, Chih-Kai
;
Huang, Guo-Wei
;
電機工程學系
A V-band dual-conversion down-converter with the Schottky-diode first conversion mixer and the analog Gilbert second conversion mixer is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. The diode mixer based on quarter-wavelength design methodology occupies a reasonable real estate at millimeter-wave frequency while the analog IF mixer has the size advantage at low microwave frequency. A trifilar transformer is employed in the first mixer to have balanced RF/LO/IF signals for the anti-parallel diode-pairs while a Marchand balance converts the RF signal into the balanced one. Analog I/Q Gilbert mixers driven by the poly-phase filter in the LO port achieve precise I/Q IF output. As a result, this work achieves a wideband conversion gain around -1 dB from 54-64 GHz, -5 dBm of IP1dB, and 6 dBm of IIP3.
Broadband Gilbert micromixer with an LO Marchand balun and a TIA output buffer
(2006)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Wu, Chih-Kai
;
Hung, Guo-Wei
A single-ended wideband downeonversion Gilbert micromixer is demonstrated in this paper using 0.35-um SiGe BiCMOS technology. Because of the wideband matching property of the micromixer, it can perform broad frequency translation. The TIA is utilized in the IF stage while a broadband Marchand balun is employed not only to generate differential LO signals but also to reserve the wideband operation of the mixer. This singleended wideband mixer has the conversion gain of 15 dB, IP(1dB) of 17 dBm, and IIP(3) of -6.5 dBm and works from 3.5 to 14.5 GHz. The input return loss is below -14 dB and the chip size is 1x1 mm(2).
Gilbert Mixers With Microwave Quadrature/Differential Generators: An Approach for Millimeter-Wave IC
(2009)
Meng, Chinchun
;
Tseng, Sheng-Che
;
電信工程研究所
;
Institute of Communications Engineering
Several microwave passive components can be integrated with active circuits in standard silicon processes for millimeter-wave applications. Passive components such as Marchand baluns, quadrature couplers, and rat-race hybrids are directly implemented on a standard low-resistivity (similar to 10 Omega xcm) silicon substrate for size compactness because of the high dielectric constant. New circuit design concepts such as balanced path loss and distortionless transmission lines are applied to tolerate the unavoidable loss and to maintain the functionality of components.
SiGe HBT Gilbert downconverter with an integrated miniaturized Marchand balun for UWB applications
(2007)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Huang, Guo-Wei
;
電信工程研究所
A 15.5-dB conversion gain 0.35-mu m SiGe HBT Gilbert mixer with the lumped-element Marchand balun for 3.1 GHz to 10.6 GHz UWB applications is implemented using standard silicon processes. This mixer has the 1.5-GHz IF 3-dB bandwidth as well as the 15.8-dB noise figure. The balun size is only 0.25 mm x 0.5 mm. Because of the balanced structure of the Marchand balun, the magnitude imbalance and phase difference of outputs are below 1 dB and about 184 degrees, respectively. In the present of a lossy substrate, the dissipated loss of the balun is still less than 4 dB thanks to the advantage of the lumped-element technique. The total current consumption of the entire mixer is 13.9 mA at 5 V voltage supply while the chip size including probing pads is 1 mm x 0.9 mm.
Monolithic broadband Gilbert micromixer with an integrated Marchand balun using standard silicon IC process
(2006-12-01)
Tseng, Sheng-Che
;
Meng, Chinchun
;
Chang, Chia-Hung
;
Wu, Chih-Kai
;
Huang, Guo-Wei
A single-ended wideband downconversion Gilbert micromixer is demonstrated in this paper using 0.35-mu m SiGe BiCMOS technology. A transimpedance amplifier with resistive feedback is utilized in the IF stage while a broadband Marchand balun is employed to generate wideband differential local oscillator signals. The planar Marchand balun topology employed in this paper can generate truly balanced signals even in the presence of the lossy low-resistivity (similar to 10 Omega (.) cm) silicon substrate. A systematic approach to measure the frequency response of each individual stage in a Gilbert mixer is developed in this paper. This single-ended wideband mixer has the conversion gain of 15 dB, IP1dB of -19 dBm, IIP3 of -7 dBm, and the noise figure of 13 dB. The mixer works from 3.5 to 14.5 GHz.
K-band CMOS sub-harmonic resistive mixer with a miniature Marchand balun on lossy silicon substrate
(2008-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wu, Po-Yi
;
Tsung, Kuan-Chang
;
電信工程研究所
A K-band sub-harmonically pumped resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A miniature Marchand Balun is integrated with the resistive mixer to generate equal amplitude and out-of-phase signals for mixer's local oscillation (LO) port directly on the lossy silicon substrate. The sub-harmonic resistive mixer with the integrated Marchand balun has conversion loss of 11-12 dB at f(IF) = 100 MHz and P-LO = 7 dBm for RF frequencies from 18 to 26 GHz. The LO-RF and LO-IF isolations are approximately 30 and 33 dB, respectively.

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