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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Meng, ChinchunSubject: search.filters.subject.SiGe

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Now showing 1 - 4 of 4
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    Broadband Gilbert micromixer with an LO Marchand balun and a TIA output buffer
    (2006)
    Tseng, Sheng-Che
    ;
    Meng, Chinchun
    ;
    Chang, Chia-Hung
    ;
    Wu, Chih-Kai
    ;
    Hung, Guo-Wei
    A single-ended wideband downeonversion Gilbert micromixer is demonstrated in this paper using 0.35-um SiGe BiCMOS technology. Because of the wideband matching property of the micromixer, it can perform broad frequency translation. The TIA is utilized in the IF stage while a broadband Marchand balun is employed not only to generate differential LO signals but also to reserve the wideband operation of the mixer. This singleended wideband mixer has the conversion gain of 15 dB, IP(1dB) of 17 dBm, and IIP(3) of -6.5 dBm and works from 3.5 to 14.5 GHz. The input return loss is below -14 dB and the chip size is 1x1 mm(2).
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    High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
    (2008-06-01)
    Wei, Hung-Ju
    ;
    Meng, Chinchun
    ;
    Chang, YuWen
    ;
    Lin, Yi-Chen
    ;
    Huan, Guo-Wei
    This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc.
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    Comparison of wideband Gilbert micromixers using SiGe HBT and GaInP/GaAs HBT technologies
    (2008-09-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    Wu, Chih-Kai
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    Wideband downconversion mixers are demonstrated by using both 0.35-mu m SiGe heterojunction bipolar transistor (HBT) and 2-mu m GaInP/GaAs HBT technologies. A micromixer topology is implemented in the RF port while a differential type shunt-shunt feedback amplifier and a differential-to-single CE-CC output buffer are used in the IF stage. The frequency response analysis and systematic measurement approach for a wideband Gilbert mixer are proposed in this article for each individual stage of local frequency (LO), radio frequency (RF), and intermediate frequency (IF). The differential LO signals are generated by several off-chip 180 degrees hybrids to cover more than 8:1 bandwidth. The SiGe HBT Micromixer achieves the conversion gain of 6 dB, IP(IdB) of -17.5 dBm, and IIP(3) of - 7 dBm with the 3.3-V supply voltage and the power consumption of 37.5 mW. On the other hand, the GaInP/GaAs HBT Micromixer achieves the conversion gain of 25 dB, IP(IdB) of -25 dBm, and IIP(3) of - 15 dBm with the 5-V supply voltage and the power consumption of 50 mW. (c) 2008 Wiley Periodicals, Inc.
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    15 GHz High-Isolation Sub-Harmonic Mixer With Delay Compensation
    (2009-12-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A 15-GHz high-isolation sub-harmonic mixer (SHM) with delay compensation is demonstrated in this letter using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The proposed SHM consisting of two parallel stacked-LO mixer cores with opposite LO I/Q inputs substantially improves port-to-port isolation. A mathematical analysis regarding the isolation properties is also included in this letter. Further, a conventional stacked-LO SHM (w/o compensation) is also implemented with the same device sizes and bias conditions for a fair comparison. SHMs w/ and w/o compensation have similar conversion gain of 9/10 dB and noise figure of 14/13.5 dB when f(LO) = 7.5 GHz. However, the delay compensation technique improves the 2LO-RF/IF isolation by 34/35 dB, the LO-RF/IF isolation by 8/9 dB, and the RF-IF isolation by 22 dB.