<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Miyamoto, YasuyukiSubject: search.filters.subject.HEMTs

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
    (2010-01-01)
    Wang, Chin-Te
    ;
    Kuo, Chien-, I
    ;
    Lim, Wee-Chin
    ;
    Hsu, Li-Han
    ;
    Hsu, Heng-Tung
    The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
  • Thumbnail Image
    Item type:Item,
    A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
    (2009)
    Kuo, Chien-I
    ;
    Hsu, Heng-Tung
    ;
    Wu, Chien-Ying
    ;
    Chang, Edward Yi
    ;
    Miyamoto, Yasuyuki
    A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
  • Thumbnail Image
    Item type:Item,
    Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications
    (2008)
    Kuo, Chien-I
    ;
    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
    ;
    Chang, Chia-Ta
    ;
    Chang, Chia-Yuan
    80-nm high electron mobility transistors (HEMTs) with different Indium content in In(x)Ga(1-x)As channel from 52%, 70% to 100% have been fabricated. Device performances degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8V (InAs/In(0.7)Ga(0.3)As), > 1V (In(0.7)Ga(0.3)As) and > 1.5V (In(0.52)Ga(0.48)As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.