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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
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    Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    (1998-11-02)
    Lee, MC
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Shu, CK
    ;
    Ou, J
    Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 degrees C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film. (C) 1998 American Institute of Physics. [S0003-6951(98)00744-X].
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    The effects of isoelectronic in-doping in GaN films grown by MOCVD
    (1998)
    Shu, CK
    ;
    Ou, J
    ;
    Lin, HC
    ;
    Pan, YC
    ;
    Lee, WH
    The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition (MOCVD) was investigated by using Raman scattering, scanning electron microscopy (SEM), Hall, Xray and photoluminescence (PL) measurements. In our study, after incorporating small amounts of In atoms into GaN compound (less than 0.4%, thus no alloy), SEM pictures showed improved surface smoothness with greatly reduced nano-pits, which was also confirmed by the multiple interference effects in PL spectra. Doping of adequate quantity caused the reduction of yellow luminescence and unintentional background concentration, and the line width shrinkage in X-ray, PL and Raman data, and the enhanced mobility. The improved crystalline and optical qualities of GaN:In films may be attributed to the decrease in dislocation density that may be related to the "impurity softening" phenomena.
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    Long-term photocapacitance decay behavior in undoped GaN
    (2000)
    Chung, HM
    ;
    Pan, YC
    ;
    Chung, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.
  • Thumbnail Image
    Item type:Item,
    Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
    (1997-12-15)
    Chen, WK
    ;
    Pan, YC
    ;
    Lin, HC
    ;
    Ou, J
    ;
    Chen, WH
    We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.