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Author: search.filters.author.Pan, YCSubject: search.filters.subject.GaN

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    Long-term photocapacitance decay behavior in undoped GaN
    (2001-10-01)
    Chung, HM
    ;
    Pan, YC
    ;
    Chuang, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified "waiting" time, t. The results indicate that the capacitance exhibits a logarithmic function of t from which a time constant of approximately 34.5 s and a cross-sectional area of less than 2.89 x 10(-27) cm(2) were retrieved. These are interpreted as the characteristic time and the cross-sectional area of electron capture by the traps associated with dislocations formed in the epifilm, respectively.
  • Thumbnail Image
    Item type:Item,
    Long-term photocapacitance decay behavior in undoped GaN
    (2000)
    Chung, HM
    ;
    Pan, YC
    ;
    Chung, WC
    ;
    Chen, NC
    ;
    Tsai, CC
    We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.