<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.SZE, SMSubject: search.filters.subject.HIGH-LEVEL INJECTION

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
    (1994-04-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    REIF, R
    ;
    電控工程研究所
    We report the theoretical investigation of the effect of Ge concentration on both static and high-frequency performances in polycrystalline silicon emitter GexSi1-x heterojunction bipolar transistors (HBTs). The calculation is carried out up to 0.95 V, before the onset of the Kirk effect [C. T. Kirk: IEEE Trans. Electron Devices ED-9 (1962) 164]. From this model, we find that the current gain, transconductance, cutoff frequency, and maximum oscillation frequency increase with increasing Ge concentration. In addition, the base transit time and the switching delay time in the emitter-coupled logic circuit slightly decrease as Ge content increases. Furthermore, it shows that the high-level injection eff ect becomes more pronounced in the GexSi1-x HBT as Ge concentration increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of GexSi1-x HBTs operating under high-level injection.
  • Thumbnail Image
    Item type:Item,
    EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
    (1994-05-01)
    CHYAN, YF
    ;
    SZE, SM
    ;
    CHANG, CY
    ;
    REIF, R
    ;
    電控工程研究所
    We report on a theoretical investigation of the eff ect of interfacial oxide on both static and dynamic performance in polycrystalline silicon emitter bipolar transistors. The calculation is carried out up to 0.9 V, before the onset of the Kirk eff ect. From the model, it is found that the current gain increases and the forward transit time decreases as interfacial oxide thickness increases. Furthermore, both the current gain and the forward transit time decrease as recombination velocity increases. In addition, the intrinsic base resistance remains almost constant as interfacial oxide thickness increases, and increases as recombination velocity increases. Compared with the conventional low-level injection model, the improved model provides much more accurate expressions for electrical characteristics of bipolar transistors operating under high-level injection.