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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Sahoo, Kartika ChandraSubject: search.filters.subject.Solar cell

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    Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications
    (2010-10-01)
    Lee, Huang-Ming
    ;
    Sahoo, Kartika Chandra
    ;
    Li, Yiming
    ;
    Wu, Jong-Ching
    ;
    Chang, Edward Yi
    We numerically calculate the spectral reflectivity of the silicon nitride (Si(3)N(4)) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si(3)N(4) SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si(3)N(4) SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si(3)N(4) SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings. (C) 2010 Elsevier B.V. All rights reserved.
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    Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
    (2012-07-01)
    Tran, Binh-Tinh
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    Chang, Edward-Yi
    ;
    Trinh, Hai-Dang
    ;
    Lee, Ching-Ting
    ;
    Sahoo, Kartika Chandra
    Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.
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    Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application
    (2009-07-01)
    Sahoo, Kartika Chandra
    ;
    Lin, Men-Ku
    ;
    Chang, Edward-Yi
    ;
    Lu, Yi-Yao
    ;
    Chen, Chun-Chi
    We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160-200 nm and a height of 140-150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen.