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Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
材料科學與工程學系
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells
(2010-10-01)
Sahoo, Kartika Chandra
;
Li, Yiming
;
Chang, Edward Yi
;
材料科學與工程學系
;
電子工程學系及電子研究所
In this paper, we, for the first time, examine the spectral reflectivity of hemisphere-, cone-, cylinder-, and parabola-shaped silicon nitride (Si3N4) subwavelength structures (SWSs). A multilayer rigorous coupled-wave approach is advanced to evaluate the reflection properties of Si3N4 SWSs. We optimize the aforementioned four different shapes of SWSs in terms of effective reflectance over a range of wavelength. The results of our paper show that a lowest effective reflectivity could be achieved for the optimized cone-shaped SWS as compared to hemisphere-, parabola-, and cylinder-shaped structures with the same volume. The best shape SWS is then fabricated together with a silicon (Si) solar cell, and the efficiency of the solar cell is compared with that of a solar cell with single-layer antireflection coating (ARC). An increase of 1.09% in cell efficiency (eta) is observed for the Si solar cell with a cone-shaped Si3N4 SWS (eta = 12.86%) as compared with the cell with single-layer Si3N4 ARCs (eta = 11.77%).
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
(2011-11-01)
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
Effect of Multiple AlN Layers on Quality of GaN Films Grown on Si Substrates
(2014-11-01)
Binh Tinh Tran
;
Lin, Kung-Liang
;
Sahoo, Kartika Chandra
;
Chung, Chen-Chen
;
Chi-Lang Nguyen
In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-mu m-thick GaN film gown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010 degrees C and a growth pressure of 50 Torr.
Fabrication and Configuration Development of Silicon Nitride Sub-Wavelength Structures for Solar Cell Application
(2010-09-01)
Sahoo, Kartika Chandra
;
Chang, Edward Yi
;
Li, Yiming
;
Lin, Men-Ku
;
Huang, Jin-Hua
To replace the double layer antireflection coating and improve the efficiency of solar cell, a self assembled nickel nano particle mask followed by inductively coupled plasma (ICP) ion etching method is proposed to form the sub-wavelength structures (SWS) on silicon nitride (Si(3)N(4)) antireflection coating layers instead of semiconductor layer. The size and density of nickel nano particles can be controlled by the initial thickness of nickel film that is annealed to form the nano-particles on the Si(3)N(4) film deposited on the silicon substrate. ICP etching time is responsible for controlling the height of the fabricated Si(3)N(4) SWS on silicon substrate, which is seen from our experiment. It is found that the lowest average reflectivity of 3.12% for wavelength ranging from 350 to 1000 nm is achieved when the diameter and height of the SWS are 120-180 nm and 150-160 nm, respectively. A low reflectance below 1% is observed over the wavelength from 590 to 680 nm for the fabricated Si(3)N(4) SWS on silicon subs. The efficiency of Si(3)N(4) SWS could be improved by 1.31%, compared with the single layer anti-reflection (SLAR) coatings of Si(3)N(4), using PC1D program. The results of this study may benefit the fabrication of solar cells.
Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications
(2010-10-01)
Lee, Huang-Ming
;
Sahoo, Kartika Chandra
;
Li, Yiming
;
Wu, Jong-Ching
;
Chang, Edward Yi
We numerically calculate the spectral reflectivity of the silicon nitride (Si(3)N(4)) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si(3)N(4) SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si(3)N(4) SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si(3)N(4) SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings. (C) 2010 Elsevier B.V. All rights reserved.
Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells
(2010-10-01)
Sahoo, Kartika Chandra
;
Li, Yiming
;
Chang, Edward Yi
;
材料科學與工程學系
;
電機工程學系
In this paper, we, for the first time, examine the spectral reflectivity of hemisphere-, cone-, cylinder-, and parabola-shaped silicon nitride (Si(3)N(4)) subwavelength structures (SWSs). A multilayer rigorous coupled-wave approach is advanced to evaluate the reflection properties of Si(3)N(4) SWSs. We optimize the aforementioned four different shapes of SWSs in terms of effective reflectance over a range of wavelength. The results of our paper show that a lowest effective reflectivity could be achieved for the optimized cone-shaped SWS as compared to hemisphere-, parabola-, and cylinder-shaped structures with the same volume. The best shape SWS is then fabricated together with a silicon (Si) solar cell, and the efficiency of the solar cell is compared with that of a solar cell with single-layer antireflection coating (ARC). An increase of 1.09% in cell efficiency (eta) is observed for the Si solar cell with a cone-shaped Si(3)N(4) SWS (eta = 12.86%) as compared with the cell with single-layer Si(3)N(4) ARCs (eta = 11.77%).
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
傳播研究所
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application
(2009)
Sahoo, Kartika Chandra
;
Li, Yiming
;
Chang, Edward Yi
;
Lin, Men-Ku
;
Huang, Jin-Hua
In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si(3)N(4)) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single- and double-layer-antireflection (SLAR and DLAR) coatings with SWS on Si(3)N(4), taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si(3)N(4) SWS height and non-etched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si(3)N(4) SLAR (similar to 15%) and almost the same as that of a DLAR with 60 nm Si(3)N(4) and 70 nm magnesium fluoride (similar to 10%).
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
(2012-07-01)
Tran, Binh-Tinh
;
Chang, Edward-Yi
;
Trinh, Hai-Dang
;
Lee, Ching-Ting
;
Sahoo, Kartika Chandra
Electro-optic characteristics of a fabricated n-In0.4Ga0.6N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and n-type contacts were investigated in this letter. The solar cell devices with ITO as n-type contacts were also compared to the solar cell using Ti/Al/Ni/Au as n-type contact in this study. High short-circuit current density observed for solar cell with ITO as n-type contacts due to the increased amount of light reaching the solar cell. The device with ITO contact exhibited an open-circuit voltage (V-oc) of 1.52 V and a short-circuit current density (J(sc)) of 8.68 mA/cm(2) with 54% fill factor. The conversion and external quantum efficiency (EQE) of the solar cell were 7.12 and 20.8%, respectively. Besides, a relationship between V-oc and In content in the InxGa1-xN alloys for this type of solar cell was also derived. (C) 2012 Elsevier B.V. All rights reserved.

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