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Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflector
(1998-11-01)
Shieh, JM
;
Huang, TC
;
Huang, KF
;
Wang, CL
;
Pan, CL
We demonstrate broadband mode-locking of femtosecond Ti:sapphire lasers with a new type of saturable Bragg reflector (SBR). Triple-strained quantum wells with separate and sequential bandgaps were used as the absorbing layer. The saturation fluence was as low as 7 mu J/cm(2). Self-starting sub-100 fs pulses tunable from 768 to 804 nm were generated in a standard X-folded cavity without intracavity tight focusing on the SBR or temperature tuning. The threshold fluence for self-starting mode-locking was 1 mu J/cm(2). (C) 1998 Elsevier Science B.V. All rights reserved.
Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures
(1996-07-15)
Chin, A
;
Chen, WJ
;
Ganikhanov, F
;
Lin, GR
;
Shieh, JM
Cross-sectional transmission electron microscopy (TEM) and femtosecond (fs) reflectivity are used to study (Ga,As) compound grown at low temperatures from 160 to 70 degrees C, A columnar polycrystalline GaAs is observed for samples grown at 160 degrees C while it appears amorphous for samples grown at temperatures below 120 degrees C, The successful growth of amorphous (Ga,As) at 70 degrees C, instead of a mixture of metallic Ga droplets and As solids, suggests that the decomposition of As-4 molecules may be catalyzed by the surface Ga. Upon annealing, all samples become polycrystalline before epitaxial solid state regrowth eventually dominates and the whole sample becomes single crystal for long enough annealing. Carrier lifetime of 230 fs is measured for the as-grown amorphous sample. For the annealed sample, the photoresponse exhibits a fast initial decay of 120 fs and a much slower secondary decay of 33 ps. The initial decay is attributed to the formation of fine polycrystalline grains (similar to 500 Angstrom in size) whose grain boundaries provide effective carrier traps and recombination centers. (C) 1996 American Institute of Physics.
Reduction of resistivity of electroplated copper by rapid thermal annealing
(2002-06-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Reduction of resistivities of copper films, electroplated by superior electrolytes with capabilities of gap filling sub-150 nm damascenes, was demonstrated to be below 2.1 muOmega cm by rapid thermal annealing at 400degrees C in 30 s. In as-deposited copper films, the charge transfer polarization resistances and the incorporation effects of additives determined their resistivity and the dosage of impurities. In addition, the activation energy for grain growth slightly increased from similar to0.33 eV for additive-free electrolytes, to similar to0.4 eV for the superior electrolytes, and the process time was significantly shorter than several hours in conventional furnace processes. (C) 2002 The Electrochemical Society.
Superpolishing for planarizing copper damascene interconnects
(2003-05-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
Li, YH
We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society.
Stable blue luminescence from mesoporous silica films
(2004)
Shieh, JM
;
Cho, AT
;
Lai, YF
;
Dai, BT
;
Pan, FM
This study investigates how blue (similar to 460 nm) photoluminescence (PL) from mesoporous silica (MS) films depends on the nanostructure and chemistry of the pores. Reducing pore-size and pore-wall can increase the total area of the pore-surfaces, and therefore the number of radiative recombination centers, within the MS matrix, enhancing PL efficiency. Moreover, the number of silianol groups on pore-surfaces, which absorb moisture and degrade the PL of the MS films, is greatly reduced by silylating MS with hydrophobicity, yielding long-term stable luminescence. The quantum-efficiency of PL and the electroluminescence of the MS films are measured about 5.0 x 10(-4) and 1.0 x 10(-6), respectively. (C) 2004 The Electrochemical Society.
Synthesis of microcrystalline silicon at room temperature using ICP
(2004)
Wu, JH
;
Shieh, JM
;
Dai, BT
;
Wu, YCS
;
材料科學與工程學系
Hydrogenated microcrystalline silicon (muc-Si:H) channel layers were synthesized at a temperature below 100degreesC by inductively coupled plasma (ICP) methods. High ionization efficiency and low ion bombardment from the ICP, enabled the use of high ICP power and, thus, extremely dense plasma or markedly increased electron temperature, promoting the diffusion capability of the reactive radicals that eventually yield ICP muc-Si:H films with large grains of several tens of nanometers, a high deposition rate of 5 Angstrom/s, and a smooth roughness of similar to1 nm. Accordingly, the epitaxial growth of muc-Si:H films at room temperature is demonstrated. (C) 2004 The Electrochemical Society.
High-voltage amplifier uses simplified circuit
(2004-10-14)
Tsai, JI
;
Shieh, JM
;
Liao, TS
;
Teng, CC
;
交大名義發表
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
(2005)
Cho, AT
;
Shieh, JM
;
Shieh, J
;
Lai, YF
;
Dai, BT
Three-dimensional Si (Ge) nanocrystals (NCs) were dispersed within the nanopores of mesoporous silica films by high-density plasma (HDP), low-density plasma, or implantation. Surface states of the resulting Si (Ge) NCs/silica arrays initiate blue-white photoluminescence (PL). HDP makes reactive species highly mobile and enables deposited NCs bonded with pore-wall well, therefore, efficiently constructing photoemission arrays. The mean density of HDP-synthesized semiconducting NCs is as high as 1 x 10(18)/cm(3). Accordingly, blue PL of arrays obtained with HDP, which is 4- 7 times stronger than those obtained with other methods, exhibits quantum-efficiency of 1%, near the reported value for green-to-red light emission from quantum-confined Si NCs. © 2005 The Electrochemical Society. All rights reserved.
Two-additive electrolytes for superplanarizing damascene Cu metals
(2005)
Liu, SH
;
Shieh, JM
;
Chen, C
;
Dai, BT
;
Hensen, K
Two-additive electropolishing (EP) electrolytes exhibit an extremely high planarization-efficiency in Cu damascene schemes, independent of pattern sizes (1- 50 mu m). This electrolyte is demonstrated by adding alcohols and organic acids to the H3PO4 electrolyte. The high wetting ability of alcohols allows such additives to easily access the damascene bottom. This mechanism, assisted by the reduced polishing rate associated with the high surface viscosity caused by alcohol additives, greatly passivates the damascene bottom from elecropolishing. Accordingly, the superpolishing functionality reported by Chang et al. [Electrochem. Solid-State Lett., 6, G72 (2003)] in the two-additive electrolyte outperforms in the one-additive electrolyte. (C) 2005 The Electrochemical Society.
A new type of saturable Bragg reflector with record-low saturation fluence and broad tuning range
(1998)
Shieh, JM
;
Huang, TC
;
Huang, KF
;
Wang, CL
;
Pan, CL
The saturation fluence for a strained triple-quantum-well saturable Bragg reflector was as low as 12 mu J/cm(2) Self-starting femtosecond pulses tunable from 768 to 804nm was realized.

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