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Author: search.filters.author.Shieh, JM

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Now showing 1 - 10 of 42
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    Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflector
    (1998-11-01)
    Shieh, JM
    ;
    Huang, TC
    ;
    Huang, KF
    ;
    Wang, CL
    ;
    Pan, CL
    We demonstrate broadband mode-locking of femtosecond Ti:sapphire lasers with a new type of saturable Bragg reflector (SBR). Triple-strained quantum wells with separate and sequential bandgaps were used as the absorbing layer. The saturation fluence was as low as 7 mu J/cm(2). Self-starting sub-100 fs pulses tunable from 768 to 804 nm were generated in a standard X-folded cavity without intracavity tight focusing on the SBR or temperature tuning. The threshold fluence for self-starting mode-locking was 1 mu J/cm(2). (C) 1998 Elsevier Science B.V. All rights reserved.
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    Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures
    (1996-07-15)
    Chin, A
    ;
    Chen, WJ
    ;
    Ganikhanov, F
    ;
    Lin, GR
    ;
    Shieh, JM
    Cross-sectional transmission electron microscopy (TEM) and femtosecond (fs) reflectivity are used to study (Ga,As) compound grown at low temperatures from 160 to 70 degrees C, A columnar polycrystalline GaAs is observed for samples grown at 160 degrees C while it appears amorphous for samples grown at temperatures below 120 degrees C, The successful growth of amorphous (Ga,As) at 70 degrees C, instead of a mixture of metallic Ga droplets and As solids, suggests that the decomposition of As-4 molecules may be catalyzed by the surface Ga. Upon annealing, all samples become polycrystalline before epitaxial solid state regrowth eventually dominates and the whole sample becomes single crystal for long enough annealing. Carrier lifetime of 230 fs is measured for the as-grown amorphous sample. For the annealed sample, the photoresponse exhibits a fast initial decay of 120 fs and a much slower secondary decay of 33 ps. The initial decay is attributed to the formation of fine polycrystalline grains (similar to 500 Angstrom in size) whose grain boundaries provide effective carrier traps and recombination centers. (C) 1996 American Institute of Physics.
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    Characterization and reduction of phase noise in passively mode-locked Ti : sapphire lasers with intracavity saturable absorbers
    (1998-06-01)
    Shieh, JM
    ;
    Liu, SC
    ;
    Pan, CL
    ;
    光電工程學系
    ;
    Department of Photonics
    We characterize the phase noises (or timing jitter) of argon-ion-laser-pumped femtosecond Ti:sapphire lasers with intracavity dye saturable absorbers or saturable Bragg reflectors (SBR's). The significance of the finite lifetime of the absorbers is identified for what is the first time to our knowledge. We show that timing fluctuations of the mode-locked lasers can be suppressed significantly by optimization of intracavity gain bandwidth and group-velocity dispersion. A new active stabilization technique, based on the optoelectronic phase locked loop, is also demonstrated. The rms timing jitter (100-500 Hz) of the femtosecond passively mode-locked Ti:sapphire/dye and Ti:sapphire/SBR lasers operating at an average power of 200 mW is reduced to similar to 650 and 290 fs (500 Hz), respectively. (C) 1998 Optical Society of America.
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    Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflector
    (1998-11-01)
    Shieh, JM
    ;
    Huang, TC
    ;
    Huang, KF
    ;
    Wang, CL
    ;
    Pan, CL
    We demonstrate broadband mode-locking of femtosecond Ti:sapphire lasers with a new type of saturable Bragg reflector (SBR). Triple-strained quantum wells with separate and sequential bandgaps were used as the absorbing layer. The saturation fluence was as low as 7 mu J/cm(2). Self-starting sub-100 fs pulses tunable from 768 to 804 nm were generated in a standard X-folded cavity without intracavity tight focusing on the SBR or temperature tuning. The threshold fluence for self-starting mode-locking was 1 mu J/cm(2). (C) 1998 Elsevier Science B.V. All rights reserved.
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    Dynamic pulse buildup in continuous-wave passively mode-locked picosecond Ti: Sapphire/DDI and Ti: Sapphire/IR140 lasers
    (1999-08-01)
    Pan, CL
    ;
    Pu, NW
    ;
    Shieh, JM
    ;
    光電工程學系
    ;
    Department of Photonics
    We have studied both theoretically and experimentally the buildup of mode-locked pulses out of noise in continuous wave (cw) passively mode-locked Ti: sapphire lasers with DDI and IR140 dye saturable absorbers, which have significantly different optical properties. The evolution of the laser output from cw, to partial mode-locking, to complete mode-locking was investigated experimentally by measuring the contrast ratio of transient autocorrelation trace, the second-harmonic-generation (SHG) conversion efficiency, the fractional energy, optical and radio frequency (RF) spectra at consecutive delay times using the time-gating technique. Theoretically, we have simulated the pulse buildup numerically by adopting the two-level model for the saturable absorber. The experimental results are in good agreement with the predictions of numerical simulation.
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    Postexposure delay effect on linewidth variation in base added chemically amplified resist
    (2000-10-01)
    Ku, CY
    ;
    Shieh, JM
    ;
    Chiou, TB
    ;
    Lin, HK
    ;
    Lei, TF
    To elucidate the linewidth variation caused by postexposure delay (PED) in resist films, the distribution of photogenerated acid, the role of additional base component, and the affect of exposure energy were investigated in tert-butoxycarbonyl protected-type chemically amplified positive deep ultraviolet resist. The resist system included an N-methyl pyrrolidone organic base which was evaluated via KrF excimer laser lithography. Using various line-and-space patterns formed with a KrF scanner, this work also investigated the change of linewidth caused by the delay time between exposure and postexposure bake. Experimental results indicate that the linewidth broadened immediately following exposure and became a constant value rather than continuously expanding for various pattern sizes. Based on the mechanism of neutralizing organic base and photogenerated acid, a model was established to describe the linewidth according to FED time. Moreover, the effect of exposure energy on linewidth variation was investigated to not only assess the influence of exposure energy but also clarify the relationship between linewidth broadening and delay rime. Experimental analysis demonstrates that the exposure latitude and depth of focus can be improved by employing FED. (C) 2000 The Electrochemical Society. S0013-4651(99)09-090-4. All rights reserved.
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    Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
    (2000-11-01)
    Chiu, SY
    ;
    Shieh, JM
    ;
    Chang, SC
    ;
    Lin, KC
    ;
    Dai, BT
    Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Deltay/Deltax between "bottom-up" with "sidewall shift" was found to be proportional to the filing power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 mum vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, Cl-, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu-0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating. (C) 2000 American Vacuum Society. [S0734-211X(00)13506-1].
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    Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
    (2001-05-01)
    Shieh, JM
    ;
    Suen, SC
    ;
    Tsai, KC
    ;
    Dai, BT
    ;
    Wu, YC
    Fluorinated amorphous carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition with low dielectric constant (K similar to2.3), thermal stability (higher than 400 degreesC) and acceptable adhesion to a cap layer such as SiOF or SiO2 were obtained by varying the range of content ratios between carbon and fluorine, the rf power, the process pressure and the base temperature. Standard x-ray photoelectron spectroscopy and thermal desorption spectroscopy metrologies were employed to characterize the deposited a-C:F films. The damascene pattern with 0.15 mum and an etching selectivity of more than 50 (a-C:F/SiOF, SiO2) was implemented by a mixture of etching gases of N-2+O-2. The bias power, rf power and gas hows were incorporated to optimize the etching recipe for achieving a damascene profile with a high aspect ratio. The scanning electron microscope results showed that a better etch profile can be obtained at higher bias power. In our damascene architecture, the etching stop layer or hard mask of both SiOF and SiO2 was studied. The SiOF, providing a lower dielectric constant than SiO2, would especially reduce the entire effective dielectric constant. Furthermore, we integrated electroplated copper into trenches or vias as small as 0.15 mum, with aspect ratio of 6. (C) 2001 American Vacuum Society.
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    Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
    (2001-05-01)
    Chang, SC
    ;
    Shieh, JM
    ;
    Lin, KC
    ;
    Dai, BT
    ;
    Wang, TC
    Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
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    Expanding the process window and reducing the optical proximity effect by post-exposure delay
    (2001-08-01)
    Ku, CY
    ;
    Shieh, JM
    ;
    Chiou, TB
    ;
    Lin, HK
    ;
    Lei, TF
    In this investigation, a novel idea had been proposed to expand the process window and reduce the optical proximity effect (OPE) by employing post-exposure delay (PED). Our previous work presented a model to specify the resist linewidth according to PED time based on the neutralization mechanism of organic base and photogenerated acid. Based on the model, the exposure latitude and depth of focus can be extended for various pattern sizes by applying PED on linewidth broadening. Moreover, the dense-iso critical dimension bias, which is caused by OPE, can also be reduced when PED is performed. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1383557] All rights reserved.