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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Shih, Min-HsiungSubject: search.filters.subject.Light-emitting diodes (LEDs)

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Now showing 1 - 3 of 3
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    Excellent Color Quality of White-Light-Emitting Diodes by Embedding Quantum Dots in Polymers Material
    (2016-01-01)
    Lin, Huang-Yu
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    Wang, Sheng-Wen
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    Lin, Chien-Chung
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    Chen, Kuo-Ju
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    Han, Hau-Vei
    This study employs the polyfluorene composite (called Green B) with several colors of quantum dots to generate the high-color-rendering index (CRI) white LEDs. The Green B polymer is a good candidate to manufacture the hybrid w-LED because of its good quantum efficacy. The hybrid w-LEDs are fabricated by the mixing of Green B with yellow quantum dots and red quantum dots or orange quantum dots to obtain the correlated color temperatures of 3500 and 5500 K. The use of the hybrid polymer/QDs w-LEDs is proved to be beneficial as QD w-LEDs can improve the CRI up to 90 in 3500 K. The luminous efficiency of such devices can be as high as 17.2l m/W.
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    Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
    (2013-11-01)
    Lin, Bing-Cheng
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    Chen, Kuo-Ju
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    Han, Hau-Vei
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    Lan, Yu-Pin
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    Chiu, Ching-Hsueh
    InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be similar to 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.
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    The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes
    (2012-07-15)
    Chen, Kuo-Ju
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    Chen, Hsin-Chu
    ;
    Shih, Min-Hsiung
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    Wang, Chao-Hsun
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    Kuo, Ming-Yen
    This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.