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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Shih, PSSubject: search.filters.subject.kink effect

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    Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
    (2000-07-01)
    Shih, PS
    ;
    Zan, HW
    ;
    Chang, TC
    ;
    Huang, TY
    ;
    Chang, CY
    N-channcl and p-channel polysilicon thin him transistors (poly-Si TFTs) with different geometries were fabricated and characterized to study the interactive effects of active channel area on drain current. We find that for both non-passivated and passivated p-TFTs, since no avalanche multiplication is involved, the drain current is increased with reduced active channel area due to the reduction of grain-boundary trap density. In contrast, a somewhat unexpected trap dependence of the kink effect is observed in n-TFTs. Consequently, the dependence of active channel area on drain current differs between non-passivated n-TFTs with large trap density and passivated n-TFTs with small trap density.
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    A W-spacer GOLD TFT with high performance and high reliability
    (2002-09-26)
    Zan, HW
    ;
    Peng, DZ
    ;
    Shih, PS
    ;
    Chang, TC
    ;
    Liu, PT
    In this paper, we successfully fabricated Gate-Overlapped Lightly-doped Drain (GOLD) polycrystalline silicon thin-film transistors (poly-Si TFTs) with selectively deposited spacers. Under appropriate deposition conditions, tungsten (W) films can be selectively deposited on poly-Si gate electrodes to form spacers without any additional etching process. Compared to the conventional poly-Si TFTs without LDD structures, our devices effectively suppress the kink effect and the punch-through phenomenon in short-channel devices. The hot-carrier reliability of our devices is also improved due to the reduced electric field on the drain side. In addition, the transconductance of our devices is compatible to that of conventional devices. This is because the W-spacer acts as a part of gate electrode to induce channel when the device is operated under ON state. (C) 2002 Elsevier Science Ltd. All rights reserved.