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Author: search.filters.author.Shih, PS

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    Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing
    (1998-09-07)
    Chen, DR
    ;
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1-0.4 J/cm(2), a continuous germanosilicide layer composed of a low-temperature phase, Pd-2(Si1-xGex), and a high-temperature phase, Pd(Si1-xGex), was formed. Incontrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm(2). Multiple pulse annealing at 0.1 J/cm(2) could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1-xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 degrees C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm(2) with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. (C) 1998 American Institute of Physics. [S0003-6951(98)04136-9].
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    Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
    (1999-06-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    電子工程學系及電子研究所
    The Cu3Si-catalyzed oxidation behavior of Cu/Si0.76Ge0.24 after annealing at a temperature of 200-300 degrees C was studied using transmission electron microscopy (TEM). For the Cu/Si0.76Ge0.24 samples annealed at 200 degrees C and followed by exposure in air for 1-4 weeks an SiO2 layer embedded with precipitates containing Cu, Ge, Si, and O was formed on the surface of the Cu-3(Si1-xGex) film. During exposure the Cu atoms released from Cu-3(Si1-xGex) by oxidation diffused down to the residual Si0.76Ge0.24 film and subsequently the Si substrate to form. new Cu-3(Si1-xGex) and Cu3Si, respectively. After exposure for 5-6 weeks not only the oxidation of the surface layer became severe but also the growth of the buried SiO2 layer was initiated at the Cu-3(Si1-xGex)/Cu3Si interface. Concurrently, the Cu3Si-catalyzed oxidation of Si by inward movement of the SiO2/Si interface was also observed. As compared with the annealed Cu/Si samples the presence of Ge significantly lowered the oxidation rate of the annealed Cu/Si0.76Ge0.24 samples. Higher temperature annealing promoted the oxidation rate because of Ge segregation out of the Cu-3(Si1-xGex) layer and the formation of a larger fraction of the Cu-3(Si1-xGex)/Cu3Si interface where the buried SiO2 layer was initially formed. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing
    (1999-07-15)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    Pan, FM
    Epitaxial Si1-x-yGexCy films have been grown by C+ implantation into Si0.76Ge0.24 films with a dose of 1.0 x 10(16)/cm(2) and subsequent pulsed KrF laser annealing at an energy density of 0.3-1.6 J/cm(2). Upon laser annealing Ce segregation to the film surface and diffusion to the underlying Si appeared at energy densities above 0.8 J/cm(2) and 1.4 J/cm(2), respectively while the depth profiles of C remained nearly unchanged as in the as-implanted Si1-x-yGeyCy film. Concurrently, no SiC and twin were observed. The amount of C incorporated into substitutional sites initially increased with the energy density in the range of 0.3-1.0 J/cm(2), and then saturated at an energy density of 1.0-1.6 J/cm(2). For the Si1-x-yGexCy films grown at 1.0 J/cm(2) for 5 and 20 pulses SiC was formed with its amount increasing with the pulse number because of C segregation to the film surface and the original amorphous/crystal interface where the EOR defects were present. For the Si1-x-yGexCy films grown at energy densities below 1.0 J/cm(2) the reduction of tensile stress mainly resulted from the effect of substitutional carbon incorporation. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing
    (1999-08-01)
    Luo, JS
    ;
    Hang, YL
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24 by pulsed KrF laser annealing as a function of energy density and pulse number were studied. For the Co/Si0.76Ge0.24 samples annealed at an energy density of 0.2-0.6 J/cm(2), three germanosilicide layers, i.e., amorphous structure and/or nanocrystal, Co(Si1-xGex), and Co(Si1-xGex)(2), were successively formed along the film-depth direction. At 0.3 J/cm(2) Ge segregated to the underlying Si0.76Ge0.24 film, inducing strain relaxation in the residual Si0.76Ge0.24 film. At 0.8 J/cm(2) the reacted region was mostly transformed to a single layer of Co(Si1-xGex)(2), whereas Ge further diffused to the Si substrate. At 1.0 J/cm2, constitutional supercooling appeared. Even the Co(Si0.76Ge0.24) film used as the starting material for laser annealing could not prevent the occurrence of constitutional supercooling at energy densities >1.6 J/cm2. The energy densities at which Co(Si1-xGex) transformation to Co(Si1-xGex)(2), Ge segregation to the underlying Si, and constitutional supercooling occurred were higher for the Co(Si0.76Ge0.24)/Si0.76Ge0.24 system than for the Co/Si0.76Ge0.24 system. Higher energy density and/or pulse number enhanced the growth of Co(Si,,Ge,), film. In the present study, the Co/Si0.76Ge0.24 samples subjected to annealing at 0.2 J/cm(2) for 20 pulses produced a smooth Co(Si,,,Ge,,,), film without inducing Ge segregation out of the germanosilicide and strain relaxation in the unreacted Si0.76Ge0.24 film.
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    A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
    (1999-08-01)
    Shih, PS
    ;
    Chang, CY
    ;
    Chang, TC
    ;
    Huang, TY
    ;
    Peng, DZ
    We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT's), The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23 degrees C, Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication.
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    Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2)
    (1999-11-29)
    Luo, JS
    ;
    Huang, JC
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    The effects of Mo-free C40 Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer between Ti films and Si0.76Ge0.24 substrates on the lowering of formation temperature of C54 Ti(Si1-xGex)(2) were studied. Metastable C40 Ti(Si1-xGex)(2) precursors were grown by pulsed KrF laser annealing. Upon rapid thermal annealing, the Mo-free C40 phase could not be directly transformed to the C54 phase without going through the C49 phase. When the thickness of the interposed Mo layer increased, up to 2.5 nm, the temperature at which the C54 phase was initially formed changed from 750 to 600 and then to 650 degrees C. The present result showed that with increasing Mo concentration in the reacted layer, the phase stability shifted from C54 to C40 and no C49 was observed. It seems that apart from the C40 template mechanism, the electron/atom ratio also plays an important role in the enhanced formation of the C54 phase. (C) 1999 American Institute of Physics. [S0003-6951(99)02048-3].
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    Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
    (2000-01-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    Pan, FM
    Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing were studied. Upon annealing at a temperature of 200-600 degrees C Ge segregation occurred with the extent becoming more severe at higher temperatures. The temperatures at which phase transformation and the agglomeration structure occurred were higher for Ni/Si1-x-yGexCy than for Ni/Si0.76Ge0.24. Upon pulsed KrF laser annealing the agglomeration structure was considerably improved, however, the retardation of phase transformation in the Ni/Si1-x-yGexCy system still occurred. C accumulation around the original amorphous/crystal interface formed by Cf implantation played a significant effect on delaying the phase transformation. For the Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy samples annealed at 0.2 J/cm(2) for 20 and 30 pulses, respectively, smooth Ni(Si0.76Ge0.24)(2) and Ni(Si1-x-yGexCy)(2) films could be grown, meanwhile Ge segregation and strain relaxation of the unreacted Si0.76Ge0.23 films were effectively suppressed. (C) 2000 American Vacuum Society. [S0734-2101(00)04301-3].
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    The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
    (2000-01-29)
    Chang, CY
    ;
    Lee, YS
    ;
    Huang, TY
    ;
    Shih, PS
    ;
    Lin, CW
    The effects of hydrogenated microcrystalline silicon (mu c-Si:H) film with various crystalline factors on thin-film transistors (TFTs) with low-high-low band gap structure are studied. Compared to hydrogenated amorphous silicon (a-Si:H) TFT with conventional inverted-stagger structure, the device with mu c-Si:H film of high crystalline factor in the active channel depicts improved interfacial active layer near the gate insulator interface as well as the later-grown bulk active layer, resulting in improved device parameters including field effect mobility, threshold voltage, subthreshold swing and ON-current. While a-Si:H film of low crystalline factor and high-band-gap is proposed for the source and drain offset regions in the new device to prevent the band-to-band tunneling, thus alleviates the high OFF-current inherent in conventional mu c-Si:H thin-film transistors, resulting in an improved ON/OFF current ratio. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
    (2000-05-01)
    Shih, PS
    ;
    Chang, TC
    ;
    Liang, CY
    ;
    Huang, TY
    ;
    Chang, CY
    Chemical mechanical polished Al (CMP-Al) films deposited at various temperatures were explored as the gate electrodes of amorphous- silicon (a-Si:H) inverted-staggered thin-film transistors (TFTs) for the first time. Although the surface roughness of the as-deposited Al films increased with increasing deposition temperature, Al films deposited at higher temperature were more robust to hillock formation during subsequent annealing. To take advantage of the better hillock suppression properties, CMP is employed to reduce the inherently large surface roughness of these high-temperature-deposited Al films. Our results show that the electrical characteristics of the TFTs are significantly improved. Specifically, the threshold voltage is reduced from 2.37 to 1.43 V, the mobility is improved from 0.32 to 1.36 cm(2)/V s, and the subthreshold swing is improved from 0.72 to 0.58 V/decade as the Al deposition temperature is increased from 25 to 400 degrees C. (C) 2000 The Electrochemical Society. S1099-0062(99)10-107-X. All rights reserved.
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    Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing
    (2000-06-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    電子工程學系及電子研究所
    Interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy. films by vacuum annealing and pulsed KrF laser annealing were studied by transmission electron microscopy (TEM) in conjunction with energy dispersive spectrometry (EDS) and X-ray diffraction (XRD). For the Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy films annealed at a temperature of 200-600 degrees C Ge segregation and agglomeration occurred at an extent becoming more severe at higher temperatures. Upon pulsed KrF laser annealing the agglomeration structure was improved. The retardation of phase transformation in the Ni/Si1-x-yGexCy system was observed upon either vacuum annealing or pulsed laser annealing. Multiple-pulse annealing is an effective method to fabricate smooth Ni(Si0.76Ge0.24)(2) and Ni(Si1-x-yGexCy)(2) films without inducing Ge segregation to the remaining substrates and strain relaxation. (C) 2000 Elsevier Science B.V. All rights reserved.