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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Song, Ming-HsiangSubject: search.filters.subject.Electrostatic discharge (ESD)

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    Compact and Low-Loss ESD Protection Design for V-Band RF Applications in a 65-nm CMOS Technology
    (2012)
    Chu, Li-Wei
    ;
    Lin, Chun-Yu
    ;
    Tsai, Shiang-Yu
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    Nanoscale CMOS technologies have been widely used to implement radio-frequency (RF) integrated circuits. However, the thinner gate oxide and silicided drain/source in nanoscale CMOS technologies seriously degrade the electrostatic discharge (ESD) robustness of RF circuits. Against ESD damage, on-chip ESD protection design must be included in RF circuits. As the RF circuits operating in the higher frequency band, the parasitic effect from ESD protection devices and/or circuits must be strictly limited. To provide the effective ESD protection for a 60-GHz low-noise amplifier (LNA) with less RF performance degradation, a new ESD protection design was studied in a 65-nm CMOS process. Such ESD-protected LNA with simulation/measurement results has been successfully verified in silicon chip to to achieve the 2-kV HBM ESD robustness with the lower power loss in a smaller layout area.
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    Item type:Item,
    ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process
    (2012)
    Lin, Chun-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Jou, Chewn-Pu
    To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.