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Author: search.filters.author.Song, Ming-HsiangSubject: search.filters.subject.silicon-controlled rectifier (SCR)

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Now showing 1 - 2 of 2
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    Improving ESD Robustness of Stacked Diodes with Embedded SCR for RF Applications in 65-nm CMOS
    (2014)
    Lin, Chun-Yu
    ;
    Fan, Mei-Lian
    ;
    Ker, Ming-Dou
    ;
    Chu, Li-Wei
    ;
    Tseng, Jen-Chou
    To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.
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    Item type:Item,
    ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process
    (2012)
    Lin, Chun-Yu
    ;
    Chu, Li-Wei
    ;
    Ker, Ming-Dou
    ;
    Song, Ming-Hsiang
    ;
    Jou, Chewn-Pu
    To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.