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Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
(2011-02-01)
Chen, William P. N.
;
Kuo, Jack J. Y.
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (mu(SR)) under process-induced uniaxial strain and compares the strain sensitivity between mu(SR) and phonon-scattering-limited mobility (mu(PH)). By an accurate split C-V mobility extraction method, the mu(SR) of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that mu(SR) has stronger stress sensitivity than mu(PH). Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
(2012-03-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Chen, Bo-Yuan
;
Huang, Guo-Wei
The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S-id) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g(d0) as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g(m) significantly decreases as temperature increases, their minimum noise figure NFmin and equivalent noise resistance R-n would degrade with increasing temperature.
Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs
(2011-12-01)
Chen, William Po-Nien
;
Kuo, Jack Jyun-Yan
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper investigates the temperature dependence of phonon-scattering-limited mobility mu(PH) for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility mu SR and mu(PH) are successfully decoupled. This paper indicates that the temperature sensitivity of mu(PH) is proportional to T(-1.75) for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.
Investigation of anomalous inversion C-V characteristics for long-channel MOSFETs with leaky dielectrics: Mechanisms and reconstruction
(2008-02-01)
Lee, Wei
;
Su, Pin
;
Su, Ke-Wei
;
Chiang, Chung-Shi
;
Liu, Sally
This paper investigates anomalous inversion capacitance-voltage (C-V) attenuation for MOSFETs with leaky dielectrics. We propose to reconstruct the inversion C-V characteristic based on long-channel MOSFETs using the concept of intrinsic input resistance (R-ii). The concept of R-ii has been validated by segmented BSIM4/SPICE simulation. Our reconstructed C-V characteristics show poly-depletion effects, which are not visible in the two-frequency three-element method and agree well with the North Carolina State University-CVC simulation results. The intrinsic input resistance dominates the overall gate-current-induced debiasing effect (similar to 95% for L = 20 mu m) and can be extracted directly from the I-V characteristics. Due to its simplicity, our proposed R-ii approach may provide an option for regular process monitoring purposes.
Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs
(2008-07-01)
Chen, William P. N.
;
Su, Pin
;
Goto, K.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.
Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs
(2008-09-01)
Chen, William Po-Nien
;
Su, Pin
;
Goto, Ken-Ichi
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.
Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
(2009)
Chen, William Po-Nien
;
Su, Pin
;
Goto, Ken-Ichi
;
Diaz, Carlos H.
;
電子工程學系及電子研究所
This paper presents a BSIM-based method for source/drain series resistance and mobility extraction in nanoscale strained-silicon metal oxide semiconductor field effect transistors (MOSFETs) with halo implants. This method is more accurate than the conventional channel-resistance and shift and ratio method because it considers the gate-length dependence of mobility caused by local uniaxial stress and laterally nonuniform channel doping. We have verified this method using samples with different stressor/doping conditions and good agreement with experimental data has been obtained. The accuracy of the Berkeley Short-channel IGFET model (BSIM) R(sd) extraction method is also proven by simulated current-voltage characteristics with different external resistant values. Significant mobility degradation in the short-channel regime has been observed for various uniaxial stressors. This method may serve as a suitable process monitor tool for ultrashallow junction and strained process development.
A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs
(2009-07-01)
Lee, Wei
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper provides a comparative study of carrier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon-limited behavior in the inversion regime. For the nonoverlapped devices, however, we found insensitive temperature dependence for drain current in both subthreshold and inversion regimes. Our low-temperature measurements indicate that the intersubband scattering is the dominant carrier transport mechanism for narrow overlapped multigate field-effect transistors (MuGFETs). For the nonoverlapped MuGFETs, the voltage-controlled potential barriers in the nonoverlapped regions may give rise to the weak localization effect (conductance reduction) and the quantum interference fluctuations.
Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
(2009-11-01)
Wu, Yu-Sheng
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.
Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
(2010-02-01)
Wu, Yu-Sheng
;
Fan, Ming-Long
;
Su, Pin
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.

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