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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Su, Yu-TingSubject: search.filters.subject.resistance random access memory (RRAM)

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    Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
    (2019-11-01)
    Zheng, Hao-Xuan
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Su, Yu-Ting
    ;
    Chen, Wen-Chung
    This article explains the difference in the reset processes between single RRAM and 1T1R RRAM structures. In the single RRAM, as the reset voltage increases, the off-state resistance increases. This is a normal RRAM operation. However, in the 1T1R structure, the reset voltage increases while the OFF-state resistance does not increase. This may be caused by either current or voltage being insufficient to switch the RRAM to its higher resistance state. The measurements of real voltage indicate that the insufficient voltage is in fact the main cause. For the 1T1R RRAM structure, if it is to be reset to a higher resistance state, it is best done by increasing the gate voltage to increase the OFF-state resistance. Therefore, we provide a method to reduce the misjudgment in the array, and it would be beneficial for the development of high-density memory.
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    Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
    (2013-05-01)
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Lou, J. C.
    In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
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    Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
    (2012-12-01)
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Chang, Geng-Wei
    ;
    Syu, Yong-En
    In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.