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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Syu, Jin-SiangSubject: search.filters.subject.Marchand balun

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    Ka-Band pHEMT Quadrupler with Injection and Extraction from Oscillator Frequency Doubling Points
    (2014-01-01)
    Chang, Wei-Ling
    ;
    Meng, Chinchun
    ;
    Syu, Jin-Siang
    ;
    Wu, Yan-Feng
    ;
    Huang, Guo-Wei
    A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.
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    5.7 GHz Gilbert I/Q downconverter integrated with a passive LO quadrature generator and an RF Marchand balun
    (2008-02-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    Yen, Ying-Chieh
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 5.7 GHz I/Q downconversion mixer is demonstrated in this letter using 0.35 mu m SiGe BiCMOS technology. A quarter-wavelength coupled line and two center-tapped transformers are utilized to generate differential quadrature LO signals. A miniaturized Marchand balun is placed before the common-base-configured RF input stage of each I/Q Gilbert mixer to generate balanced RF signals. All the reactive passive elements are placed directly on the standard silicon substrate. The 5.7 GHz I/Q downconverter achieves 7 dB conversion gain, -26 dBm IP1dB, and -18 dBm IIP3 at the power consumption of 3.875 mW and 2.5 V supply voltage.
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    15 GHz High-Isolation Sub-Harmonic Mixer With Delay Compensation
    (2009-12-01)
    Syu, Jin-Siang
    ;
    Meng, Chinchun
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    A 15-GHz high-isolation sub-harmonic mixer (SHM) with delay compensation is demonstrated in this letter using 0.35 mu m SiGe heterojunction bipolar transistor (HBT) technology. The proposed SHM consisting of two parallel stacked-LO mixer cores with opposite LO I/Q inputs substantially improves port-to-port isolation. A mathematical analysis regarding the isolation properties is also included in this letter. Further, a conventional stacked-LO SHM (w/o compensation) is also implemented with the same device sizes and bias conditions for a fair comparison. SHMs w/ and w/o compensation have similar conversion gain of 9/10 dB and noise figure of 14/13.5 dB when f(LO) = 7.5 GHz. However, the delay compensation technique improves the 2LO-RF/IF isolation by 34/35 dB, the LO-RF/IF isolation by 8/9 dB, and the RF-IF isolation by 22 dB.