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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.TSANG, JSSubject: search.filters.subject.BAND BENDING

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    EVIDENCE OF ZERO POTENTIAL SPIKE ENERGY IN ALGAAS GAAS HETEROSTRUCTURE EMITTER BIPOLAR-TRANSISTORS
    (1993-10-01)
    CHEN, HR
    ;
    LEE, CP
    ;
    CHANG, CY
    ;
    TSAI, KL
    ;
    TSANG, JS
    The potential spike energy at the emitter junction of AlGaAs/GaAs heterostructure emitter bipolar transistors (HEBT) was directly measured for the first time. Experimental data revealed that emitter thickness as thin as 300 angstrom is thick enough to eliminate potential spike without compositional grading. It is found that the band bending in n-GaAs reduces the potential spike and hence very low offset voltage of 70 mV with high current gain of 150 can be obtained.