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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.TSANG, JSSubject: search.filters.subject.PHOTOLUMINESCENCE

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    COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER
    (1994-01-01)
    LIU, DC
    ;
    LEE, CP
    ;
    TSAI, KL
    ;
    TSANG, JS
    ;
    CHEN, HR
    By fast change of the As-2 flux using a high temperature valved cracker, we have demonstrated the growth of strained InxGa1-xAs quantum wells with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under different As-2 fluxes. Photoluminescence (PL) emission from the quantum wells clearly indicates the change in composition. A change of In composition from 20.6% to 8.5%, has been achieved by changing the V/III beam-equivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs single quantum well lasers with different emission wavelengths.
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    EFFECTS OF LOW-TEMPERATURE-GROWN GAAS LAYER ON COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES
    (1995-02-01)
    TSANG, JS
    ;
    LEE, CP
    ;
    FAN, JC
    ;
    LEE, SH
    ;
    TSAI, KL
    Effects of thickness and position of the low-temperature-grown GaAs (LT-GaAs) layer on the compositional disordering of AlGaAs/GaAs superlattice have been studied. Samples with a top LT-GaAs layer or a bottom LT-GaAs layer have been studied with various annealing conditions. It was found that the LT-GaAs layer grown on top of the superlattice is more effective in causing disordering than the LT-GaAs layer grown at the bottom. The amount of disordering increases with the thickness of the LT-GaAs layer. A selective disordering process has been developed using a patterned LT-GaAs cap layer. This disordering technique is very simple and can be easily applied to device fabrication.