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Author: search.filters.author.Tsai, Chia-MingSubject: search.filters.subject.CMOS technology

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Now showing 1 - 3 of 3
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    Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
    (2020-01-01)
    Hsieh, Chin-An
    ;
    Tsai, Chia-Ming
    ;
    Tsui, Bing-Yue
    ;
    Hsiao, Bo-Jen
    ;
    Lin, Sheng-Di
    Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.
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    Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes
    (2018-01-01)
    Wu, Dai-Rong
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    Tsai, Chia-Ming
    ;
    Lin, Sheng-Di
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We investigate time-resolved crosstalk probability between single-photon avalanche diodes in CMOS technology. The time-correlated crosstalk measurements reveal an unusual double-peak feature. This behavior becomes more significant at higher excess bias voltages and shorter device-to-device distance and its physical reason will be discussed.
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    Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-mu m High-Voltage CMOS Process
    (2018-02-01)
    Wu, Dai-Rong
    ;
    Tsai, Chia-Ming
    ;
    Huang, Yi-Hsiang
    ;
    Lin, Sheng-Di
    ;
    電子工程學系及電子研究所
    Crosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, and bias voltage on crosstalk has been experimentally studied. Our work reveals that direct-path optical crosstalk dominates in these CMOS SPADs, which is also confirmed with the first time-correlated crosstalk measurement. This work is valuable for SPAD array design and optimization in CMOS technology.