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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Tsai, MSSubject: search.filters.subject.bottom electrodes

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    Item type:Item,
    Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
    (1998-11-01)
    Tsai, MS
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
    (1998-11-01)
    Tsai, MS
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films
    (2000-03-01)
    Tsai, MS
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The influence of bottom electrodes (Pt, Ir, Ru) on the degradation of (Ba,Sr)TiO3 (BST) thin films under dc stress conditions was investigated. The current-time (I-t) end current-voltage (I-V) measurement results indicated that the BST thin films deposited on Ru have faster degradation than those deposited on Pt and Ir. The degradation was considered to be caused by the deterioration of Schottky-barrier. Under de stress conditions, the dielectric relaxation current in the BST dielectric films probably enhances the deterioration. The breakdown time was found to be approximated by an exponential function of an electric field [t(B) = alpha exp(-beta E)] for dc stress. The value of the exponential factor beta for BST deposited on Pt and Ir was about a quarter of that for BST deposited on Ru. The different value of beta observed under de stress indicates that the degradation of BST on Ru would be more serious than on Pt and Ir. The ten Sears lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir and Ru have longer lifetime over ten years on operation at the voltage bias of 1 V.