<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Tsai, MSSubject: search.filters.subject.copper

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
    (1999-10-15)
    Hu, TC
    ;
    Chiu, SY
    ;
    Dai, BT
    ;
    Tsai, MS
    ;
    Tung, IC
    A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Post-Cu CMP cleaning for colloidal silica abrasive removal
    (2004-11-01)
    Chen, PL
    ;
    Chen, JH
    ;
    Tsai, MS
    ;
    Dai, BT
    ;
    Yeh, CF
    In this study, an efficient approach for the removal of colloidal silica abrasives from the polished copper surface was proposed and demonstrated. This post-chemical mechanical polishing (CMP) cleaning process combines a buffing process with dilute HNO3/benzotriazole (BTA) aqueous solution for copper surface passivation and a polyvinyl alcohol (PVA) brush scrubbing process with wetting surfactants, Triton X-100, for colloidal silica removal. Buffing with HNO3/BTA aqueous solution was able to remove copper oxide and form the Cu(I)-BTA hydrophobic passivation. Scrubbing with Triton X-100 surfactant is to enhance the wettability on Cu(I)-BTA surface for the removal of residual silica abrasives. The wetting ability of Triton X-100 was determined by a contact angle and surface tension measurements. It was demonstrated that silica abrasives could be removed efficiently without copper corrosion by this cleaning process. (C) 2004 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
    (1997-10-31)
    Wang, MT
    ;
    Tsai, MS
    ;
    Liu, C
    ;
    Tseng, WT
    ;
    Chang, TC
    Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive and various types and concentrations of oxidizer, as well as benezotriazole (BTA) additive. We found that the corrosion rate of copper film decreases with increasing BTA concentration in 3 vol.% HNO3 solution, but the passivation effect of BTA saturates as the concentration reaches about 0.01 M. On the other hand, a small amount of H2O2 in H2O2/XJFW8099 slurry enhances the corrosion rate dramatically, while abundance of H2O2 in the slurry suppresses the corrosion reaction effectively. The polishing rate and its non-uniformity decrease with increasing volume ratio of H2O2 in H2O2/XJEW8099 slurry. A very smooth surface with a removal rate of 363.0 nm/min was obtained using the slurry of 1/1 ratio. Depletion of H2O2 in the slurry can result in more abrasive residuals as well as a rougher surface; the surface roughness increases from 0.3 to 9.9 nm as the H2O2/XJFW8099 ratio decreases from 1/1 to 1/4. Our results indicate that the corrosion rate, polishing rate and surface roughness of copper films are sensitively dependent on the type and concentration of oxidizer as well as the BTA additive. (C) 1997 Elsevier Science S.A.