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Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
(1998-01-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
Chemical mechanical polishing for selective CVD-W
(1997-10-30)
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
(1998-11-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Conduction mechanism and temperature-dependent current-voltage in (Ba, Sr)TiO3 thin films
(1998-08-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
RF magnetron sputtered (Ba, Sr)TiO3 (BST) thin films were deposited on Pt/SiO substrate with various O-2/(O-2 + Ar) mixing ratios (OMR) ranging from 0 to 60%. Two possible conduction mechanisms of the BST thin films, the Poole-Frenkel (PF) transport (bulk limited conduction) and the Schottky emission (SE) (electrode limited conduction) were studied. Experimental results indicated that the BST films prepared at low OMR (0-25%) exhibit the SE mechanism dominated below the transition electric field of 490 kV/cm and the PF transport mechanism dominated beyond 490 kV/cm; and while those prepared at high OMR (40-60%) display the SE mechanism dominated both below and beyond the transition electric field. The difference in dominant mechanism (bulk and electrode limited conduction) between films was ascribed to concentration variation of the oxygen vacancy in the films.
Effect of bottom electrodes on dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 thin film capacitors
(1998-11-01)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric relaxation and defect analysis of (Ba0.47Sr0.53)TiO3 (BST) thin films deposited on various bottom electrodes, such as Pt, Ir, IrO2/Ir, Ru, RuO2/Ru before and after annealing in O-2 ambient was investigated. Through the measurement of dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the trapping dielectric relaxation and defect quantity of the films, and proposed an equivalent circuit on the basis of the capacitance, admittance and impedance spectra. A shallow trap level located at 0.005-0.01 eV below the conduction band was observed from the admittance spectral studies in the temperature range of 27-150 degrees C. The origin of dielectric relaxation and defect concentration was attributed to the existence of the grain boundary defect, interface defect and shallow trap level in the films. An equivalent circuit was established which can well explain the AC response and identify the contribution of defects on electrical properties of BST thin film. From the viewpoint of trapping phenomena and dielectric relaxation analyses, we propose Ir as the optimum material for bottom electrode to withstand the post-annealing treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba0.47Sr0.53TiO3 film capacitors
(1999-02-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and leakage current density of Ba0.47Sr0.53TiO3 (BST) thin films deposited by radiofrequency magnetron sputtering on various bottom electrode materials (Pt, Ir, IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 and N-2 ambient were investigated. Improvement in crystallinity of BST films deposited on various bottom electrodes was observed with annealing. The refractive index, dielectric constant, loss tangent, and leakage current of the films were also strongly dependent on annealing conditions. A BST thin film deposited on an Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, had a dielectric constant of 593 +/- 5%, a loss tangent of 0.019 +/- 10% at 100 kHz, a leakage current of (2.1 +/- 13%) x 10(-8) A/cm(2) at an electric field of 100 kV/cm with a delay time of 30 s, and a charge storage density of 53 +/- 5% fC/mu m(2) at an applied field of 150 kV/cm. Based on the dielectric constant, leakage current, and reliability, the optimum material for the bottom electrode with annealing was Ir, Interdiffusion of Ru and Ti at the interface between the BST film and Ru electrode was observed in 500 degrees-700 degrees C annealed samples. The 10 year lifetime of time-dependent dielectric breakdown (TDDB) studies indicated that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru had long lifetime over 10 years of operation at a voltage bias of 1 V.
Effect of bottom electrode materials on the electrical and reliability characteristics of (Ba, Sr)TiO3 capacitors
(1999-09-01)
Tsai, MS
;
Sun, SC
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric constant and the leakage current density of (Ba, Sr)TiO3 (BST) thin films deposited on various bottom electrode materials (Pt, Ir. IrO2/Ir, Ru, RuO2/Ru) before and after annealing in O-2 ambient were investigated. The improvement of crystallinity of BST films deposited on various bottom electrodes was observed after the postannealing process, The dielectric constant and leakage current of the films were also strongly dependent on the postannealing conditions. BST thin film deposited on Ir bottom electrode at 500 degrees C, after 700 degrees C annealing in O-2 for 20 min, has the dielectric constant of 593, a loss tangent of 0.019 at 100 kHz, a leakage current density of 1.9 x 10(-8) A/cm(2) at an electric field of 200 kV/cm with a delay time of 30 s, and a charge storage density of 53 fC/mu m(2) at an applied field of 100 kV/cm, The BST films deposited on Ir with post-annealing can obtain better dielectric properties than on other bottom electrodes in our experiments, And Ru electrode is unstable because the interdiffusion of Ru and Ti occurs at the interface between the BST and Ru after postannealing. The ten-year lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir, IrO2/Ir, Ru, and RuO2/Ru have long lifetimes over ten years on operation at the voltage bias of 2 V.
Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3 thin-film capacitors
(1999-09-07)
Tsai, MS
;
Tseng, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The ionic and electronic conductivity characteristics and defects in the Ba0.47Sr0.53TiO3 (BST) thin films that were rf-sputtered at 450 degrees C on a Pt bottom electrode at various O-2/(Ar + O-2) mixing ratios (OMR) were studied. The dielectric properties specific to the BST films can be explained by considering the influence of the dielectric relaxation phenomenon. Through the measurement of the dielectric dispersion as a function of frequency (100 Hz less than or equal to f less than or equal to 10 MHz) and temperature (27 degrees C less than or equal to T less than or equal to 150 degrees C), we studied the dielectric relaxation and obtained the defect quantity of the films, on the basis of the capacitance, admittance and impedance spectra. The defect density of BST films decreases with an increase of OMR. The majority of electrical conductivity is carried by electrons (electronic conductivity) and not the ionic defects (ionic conductivity).

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