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Author: search.filters.author.Tseng, TYSubject: search.filters.subject.dielectric constant

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    Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
    (2000-08-15)
    Ezhilvalavan, S
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This paper reviews the recent developments of (Ba,Sr)TiO3 (BST) thin films for future Gbit era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors in the last decade are briefly described first. Then the technological aspects of BST films such as deposition techniques, post-annealing, physical, electrical and dielectric characteristics of the films, effects of electrode materials, dielectric relaxation and defect analysis and the reliability phenomena associated with the films are briefly reviewed with specific examples from recent literature. The basic mechanisms that control the bulk electrical conduction and the origin of leakage currents in BST films are also discussed. Finally, possible developments of gigabit era DRAM technology are summarized. (C) 2000 Elsevier Science S.A. All rights reserved.
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    Sol-gel derived (Ba0.5Sr0.5)TiO3 thin films and their electrical and dielectric properties
    (2001)
    Nayak, M
    ;
    Lee, SY
    ;
    Tseng, TY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Barium strontium titanate thin films with composition (Ba0.5Sr0.5)TiO3 were prepared by a sot-gel method using hydroxide-alkoxide precursors. Reasonably well-crystallized film was obtained at a temperature as low as 500 degreesC. The leakage current characteristics and dielectric constant of the films varied with the annealing temperature due to the change in microstructure. The electrical and dielectric properties of the films showed strong dependence on the precursor solution concentration. Dielectric response of the films prepared from dilute solution is superior to that prepared from the concentrated solution. The change in electrical and dielectric characteristics of the films has been correlated to their microstructure, which revealed that the concentration change affected the grain size distribution, film porosity and morphology.
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    Characterization of porous silicate for ultra-low k dielectric application
    (2002-07-01)
    Liu, PT
    ;
    Chang, TC
    ;
    Hsu, KC
    ;
    Tseng, TY
    ;
    Chen, LM
    Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 degreesC for I h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. (C) 2002 Elsevier Science B.V. All rights reserved.