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Author: search.filters.author.Tung, CHSubject: search.filters.subject.Schottky

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    Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
    (2004-05-01)
    Zhu, SY
    ;
    Yu, HY
    ;
    Whang, SJ
    ;
    Chen, JH
    ;
    Shen, C
    This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-kappa gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi source/drain (S/D), excellent electrical performance of I-on/I-off similar to 10(7) - 10(8) and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, I-on/I-off can reach similar to 10(5) at V-ds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-kappa dielectric and metal-gate materials to be used in the future generation CMOS technology.
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    Item type:Item,
    N-type Schottky barrier source/drain MOSFET using ytterbium silicide
    (2004-08-01)
    Zhu, SY
    ;
    Chen, JD
    ;
    Li, MF
    ;
    Lee, SJ
    ;
    Singh, J
    Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.