🏛️國立陽明交通大學機構典藏

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EFFECT OF ENERGY-BAND STRUCTURES ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS
(1980-01-01)
WU, CC
;
CHEN, A
;
應用數學系
;
Department of Applied Mathematics
THEORY OF TOTAL-REFLECTION-MODE ACOUSTIC-SURFACE-WAVE AMPLIFICATION IN PIEZOELECTRIC SEMICONDUCTOR-FILMS
(1983-01-01)
WU, CC
;
電子物理學系
;
應用數學系
;
Department of Electrophysics
;
Department of Applied Mathematics
EFFECT OF NON-PARABOLICITY ON TRANSVERSE MAGNETORESISTANCE OF SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS
(1978-01-01)
WU, CC
;
CHEN, A
;
應用數學系
;
Department of Applied Mathematics
FREE-CARRIER ABSORPTION IN N-TYPE GALLIUM-ARSENIDE IN QUANTIZING MAGNETIC-FIELDS
(1991-03-15)
WU, CC
;
TSAI, J
;
LIN, CJ
;
應用數學系
;
電子工程學系及電子研究所
Free-carrier absorption in n-type GaAs in quantizing magnetic fields has been investigated quantum mechanically. It is assumed that the energy gand of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is acoustic-phonon scattering via deformation-potential coupling. When the radiation field is polarized parallel to the magnetic field, the free-carrier absorption coefficient assumes a complex value due to the ac radiation and phonon fields. Our results show that the real part of the absorption coefficient and the imaginary part of the absorption coefficient oscillate with the magnetic field. However, at very low temperatures, oscillations in the imaginary part are diminished and its value decreases rapidly with increasing magnetic field.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-01-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
THE EFFECT OF SCATTERING MECHANISMS ON TRANSVERSE MAGNETORESISTANCE IN PIEZOELECTRIC SEMICONDUCTORS
(1987-01-01)
WU, CC
;
LIN, CJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
THE GENERALIZED WEIGHTED ASSOCIATIVE MEMORY
(1993)
YEH, B
;
CHANG, JY
;
WU, CC
;
電控工程研究所
;
Institute of Electrical and Control Engineering
EFFECT OF NONPOLAR OPTICAL PHONON-SCATTERING ON FREE-CARRIER ABSORPTION IN QUANTIZING MAGNETIC-FIELDS
(1993)
WU, CC
;
LIN, CJ
;
電控工程研究所
;
Institute of Electrical and Control Engineering
MAGNETIC-FIELD DEPENDENCE OF ELECTRICAL CONDUCTIVITY FOR NONELLIPSOIDAL NONPARABOLIC BAND-STRUCTURE
(1973-01-01)
WU, CC
;
TSAI, J
;
工學院
;
College of Engineering

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🏛️國立陽明交通大學機構典藏

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