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Author: search.filters.author.Wang, JSSubject: search.filters.subject.annealing

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    Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
    (2001-05-01)
    Chen, JF
    ;
    Huang, MM
    ;
    Wang, JS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The annealing behavior of nitrogen-implanted GaAs samples has been investigated by secondary ion mass spectroscopy, current-voltage (I-V) and capacitance-frequency (C-F) measurements. The I-V data show that the conductivity of as-implanted samples is dominated by variable-range hopping beta een defect states below 300 K. The implanted layer becomes highly resistive after annealing. The activation energy of the resistance is found to increase from 0.2 eV for as-implanted samples to 0.71 eV for 950 degreesC-annealed samples. Significant capacitance dispersion is observed over frequency for implanted samples. Based on a proposed equivalent circuit, the high-frequency capacitance dispersion is shown to be the result. of resistance-capacitance (RC) time constant effects. The increase of activation energy of the resistance can be explained by the creation of deep traps by high temperature annealing. Traps at 0.69 eV and 0.82 eV are detected for 700 degreesC and 950 degreesC-annealing, respectively.
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    Properties of defect traps in triple-stack InAs/GaAs quantum dots and effect of annealing
    (2004-09-15)
    Chen, JF
    ;
    Hsiao, RS
    ;
    Shih, SH
    ;
    Wang, PY
    ;
    Wang, JS
    The electrical and optical properties of the defect traps, with and without annealing, in InAs/GaAs quantum dots (QDs) emitting at 1.3 mum are investigated by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and photoluminescence (PL). When increasing the InAs thickness to 3 ML, an abnormal temperature dependence of the C-V characteristic was observed in the triple-stack InAs/GaAs QD sample. This temperature dependence is attributed to the defect levels at 0.39 and 0.54 eV observed in DLTS. The level at 0.39 eV, found in the top GaAs barrier, is probably related to the relaxation-induced dislocations. The level at 0.54 eV is found close to the QD region. Rapid thermal annealing can reduce the concentrations of both levels. Comparing with PL result, which shows a blueshift of 140 meV and linewidth narrowing in the QD emission by annealing at 800degreesC, the level at 0.54 eV is speculated to be strain- or relaxation-related defects in the interface between the QDs and the barrier. Removal of this level by high-temperature RTA is important since this level lies close to the QDs and influences the optical quality of the QDs.