<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wang, JSSubject: search.filters.subject.deep traps

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
    (2000-03-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, JS
    ;
    Wang, PY
    ;
    電子物理學系
    Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.
  • Thumbnail Image
    Item type:Item,
    Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
    (2001-02-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, JS
    ;
    Chen, YF
    ;
    電子物理學系
    The use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied, Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion layer, a simple equation of capacitance at different voltages and frequencies is derived and compared with experimental data obtained from relaxed In0.2Ga0.8As/GaAs samples, It is shown that the carrier-depletion layer will introduce capacitance dispersion over frequency like traps; from it the device's geometric parameters, the resistance of the carrier-depletion lager and the ionization energy of the deep level that gives rise to this resistance can be obtained. The relation between the low-frequency capacitance and reverse voltage can be well explained by the depletion of the free carriers between the Schottky depletion and the carrier-depletion layer The relaxation-induced traps are believed to be at 0.535 and 0.36 eV, respectively, in the GaAs and In0.2Ga0.8As regions.
  • Thumbnail Image
    Item type:Item,
    Annealing temperature dependence of electric conduction and capacitance dispersion in nitrogen-implanted GaAs
    (2001-05-01)
    Chen, JF
    ;
    Huang, MM
    ;
    Wang, JS
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The annealing behavior of nitrogen-implanted GaAs samples has been investigated by secondary ion mass spectroscopy, current-voltage (I-V) and capacitance-frequency (C-F) measurements. The I-V data show that the conductivity of as-implanted samples is dominated by variable-range hopping beta een defect states below 300 K. The implanted layer becomes highly resistive after annealing. The activation energy of the resistance is found to increase from 0.2 eV for as-implanted samples to 0.71 eV for 950 degreesC-annealed samples. Significant capacitance dispersion is observed over frequency for implanted samples. Based on a proposed equivalent circuit, the high-frequency capacitance dispersion is shown to be the result. of resistance-capacitance (RC) time constant effects. The increase of activation energy of the resistance can be explained by the creation of deep traps by high temperature annealing. Traps at 0.69 eV and 0.82 eV are detected for 700 degreesC and 950 degreesC-annealing, respectively.
  • Thumbnail Image
    Item type:Item,
    Effect of nitrogen incorporation into InAs layer in InAs/InGaAs self-assembled quantum dots
    (2005-09-01)
    Chen, JF
    ;
    Hsiao, RS
    ;
    Chen, YC
    ;
    Chen, YP
    ;
    Hsieh, MT
    We present the results of nitrogen. incorporation into the InAs layer in InAs/InGaAs quantum dots (QDs). We show that this incorporation causes an asymmetric photoluminescence (PL) line shape and abnormally, large redshift of the PL peak from the quantum dots as temperature increases. In addition, this incorporation causes a large series resistance and a rapid increase in reverse current at a bias corresponding to the QD region. This effect is due to the formation of a deep trap at 0.34-0.41 eV, which depletes the carriers in the QD region. This depletion gives rise to a geometric resistance-capacitance time-constant effect for the ac conductivity of the free electrons in the top GaAs layer. This trap markedly alters the emission properties of the QD structure. The ac conductivity of the QD structure is governed by the thermal activation of trapped electrons rather than the electron emission from the QD confined states. This incorporation significantly increases the electron emission time from the QD region and, thus, can be used intentionally to modify the emission properties of the QD structure.