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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Wang, MFSubject: search.filters.subject.agglomeration

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    Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
    (2002-02-01)
    Wang, MF
    ;
    Huang, TY
    ;
    Kao, YC
    ;
    Lin, HC
    ;
    Chang, CY
    The effects of rapid thermal annealing (RTA) performed after source/drain (S/D) implantation on the characteristics of complementary metal-oxide-semiconductor (CMOS) transistors with a TiN metal gate were investigated thoroughly. It was shown that n-channel devices require a higher thermal budget in order to reduce junction leakage, compared to p-channel devices. It was also found that the flat-band voltage and oxide thickness are both affected by the annealing temperature, particularly for p-channel devices. In n-channel devices, the gate leakage current level is highly dependent on channel length and RTA temperatures. Further analysis indicated that the agglomeration phenomenon during the high-temperature RTA step occurs more easily as the metal gate length becomes narrower. When this happens, gate oxide integrity is degraded, resulting in an increased gate leakage of n-channel transistors.