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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wang, PYHas files: No

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    Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy
    (1996-06-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Chiu, SY
    ;
    Wang, PY
    ;
    Lee, WI
    The temperature-dependent I-V characteristics of n(+) GaAs low-temperature GaAs(AlGaAs) n(+) GaAs structures in which the low-temperature layers were grown at 250, 350, and 450 degrees C were analyzed. Band conduction with an activation energy of 0.72 eV dominates at T>250 K. Hopping conduction dominates at T<250 K, where the resistivity was found to be insensitive to temperature. From this analysis, it is shown that Fermi level is pinned to an acceptorlike deep level of about 10(17) cm(-3), which lies at 0.72 eV below the conduction band. Measured capacitance can be described in terms of a parallel-plate capacitance with separation being equal to the expected growth thickness. Majority traps (electrons) were observed by deep-level transient spectroscopy with an activation energy about 0.72 eV, confirming the result of the resistivity analysis. In addition, the I-V characteristics were fitted to the simulated curves based on a simplified space-charge limited theory and the result was found to be consistent with the resistivity analysis. (C) 1996 American Institute of Physics.
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    Item type:Item,
    Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs
    (1998-02-01)
    Chen, NC
    ;
    Wang, PY
    ;
    Chen, JF
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The sample considered herein is an annealed low-temperature (LT) molecular beam epitaxially grown GaAs of n-LT-i-p structure with the LT layer grown at 300 degrees C. Characteristics involving the dominant trap level located at about 0.66 eV below the conduction band are obtained by analyzing the data of the admittance spectroscopy, capacitance-voltage, current-voltage, and frequency-dependent conductance experiments. This trap pins the fermi level of the LT layer and makes the LT layer semi-insulating. In this structure, the level interacts with both the conduction band and the valence band with a hole emission time constant characterized by an activation energy of 0.77 eV and a cross section of 1.1 X 10(-13) cm(2). This level is also an effective generation-recombination center when the temperature exceeds 300 K. (C) 1998 American Institute of Physics. [S0021-8979(98)04303-5].
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    Item type:Item,
    Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature
    (1998-03-02)
    Chen, NC
    ;
    Wang, PY
    ;
    Chen, JF
    ;
    電子物理學系
    ;
    Department of Electrophysics
    The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 degrees C and annealed at 620 degrees C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging-discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. (C) 1998 American Institute of Physics.
  • Thumbnail Image
    Item type:Item,
    Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy
    (1996-06-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Chiu, SY
    ;
    Wang, PY
    ;
    Lee, WI
    The temperature-dependent I-V characteristics of n(+) GaAs low-temperature GaAs(AlGaAs) n(+) GaAs structures in which the low-temperature layers were grown at 250, 350, and 450 degrees C were analyzed. Band conduction with an activation energy of 0.72 eV dominates at T>250 K. Hopping conduction dominates at T<250 K, where the resistivity was found to be insensitive to temperature. From this analysis, it is shown that Fermi level is pinned to an acceptorlike deep level of about 10(17) cm(-3), which lies at 0.72 eV below the conduction band. Measured capacitance can be described in terms of a parallel-plate capacitance with separation being equal to the expected growth thickness. Majority traps (electrons) were observed by deep-level transient spectroscopy with an activation energy about 0.72 eV, confirming the result of the resistivity analysis. In addition, the I-V characteristics were fitted to the simulated curves based on a simplified space-charge limited theory and the result was found to be consistent with the resistivity analysis. (C) 1996 American Institute of Physics.
  • Thumbnail Image
    Item type:Item,
    Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures
    (1997-02-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, PY
    ;
    Tsai, MH
    ;
    交大名義發表
    The properties of low-temperature grown GaAs are studied via the electrical characterization of p-i-n structures with part of the intrinsic layer grown at 300 degrees C. Comparisons are made between the low-temperature and normally grown samples. The current of the low-temperature sample is about two orders of magnitude higher than that of the normally grown sample in both forward and reverse bias. From temperature-dependent analysis, the leakage current of the low-temperature sample is contributed by the recombination current through defect levels around the midgap, from which a recombination lifetime of 9.4X10(-12) a was obtained. By using admittance spectroscopy we observed a dominant electron level at 0.60 eV with a corresponding capture cross section of 1.0x10(-13) cm(2) that was not observed in the normally grown sample; thus it is believed to be introduced by the As-rich low-temperature layer. (C) 1997 American Institute of Physics.