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Author: search.filters.author.Wang, S. C.Subject: search.filters.subject.AlGaN

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Now showing 1 - 4 of 4
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    Growth and characterization of a-plane AlxGa1-xN alloys by metalorganic chemical vapor deposition
    (2010-03-01)
    Huang, H. M.
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    Ling, S. C.
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    Chen, J. R.
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    Ko, T. S.
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    Li, J. C.
    The non-polar a-plane AlxGa1-xN alloys on GaN epitaxial layer with different Al compositions (0 <= x <= 0.2) were grown on r-plane (1 (1) over bar 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0 <= x <= 0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition. (C) 2010 Elsevier B.V. All rights reserved.
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    AlGaN/GaN multiple quantum wells grown by atomic layer deposition - art. no. 68941V
    (2008)
    Lo, M. H.
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    Li, Z. Y.
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    Chen, J. R.
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    Ko, T. S.
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    Lu, T. C.
    A three-pair AlGaN/GaN multiple quantum well (MQW) structure with superlattices (SLs) was grown on c-plane sapphire using metal organic chemical vapor deposition (MOCVD) system. The AlGaN barrier and GaN well of the MQW structure were grown by atomic layer deposition (ALD) and conventional growth, respectively. The HRTEM and HRXRD results show the grown structure has shape interface between SLs layers and QWs with good periodicity. The AFM and SEM data show smooth surface morphology with low RMS value and low defect density. The CL measurements also indicate uniform luminescence pattern at room temperature. The AlGaN/GaN MQW with AlN/GaN SLs structure grown by ALD could be used to improve the surface morphology by effectively suppress the threading dislocation.
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    Fabrication and characteristics of GaN/AlGaN multilayer structure for terahertz quantum-cascade laser
    (2006)
    Wang, S. C.
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    Soref, Richard
    ;
    Sun, Greg
    ;
    光電工程學系
    ;
    Department of Photonics
    The GaN/AlGaN multilayer structure for the active regions of terahertz quantum cascade lasers (QCLs) was grown by metal organic chemical vapor deposition (MOCVD). The surface morphology of the grown sample showed good surface quality with an average roughness of less than 1 nm. The x-ray diffraction pattern and transmission electron microscopy images showed that the well-controlled quantum cascade GaN/AlGaN layers were grown. The Fourier transform infrared spectrometer measurement showed a distinct A(1) (LO) phonon frequency at 822 cm(-1) that is red-shifted with respect to the single Al0.2Ga0.8N layer due to the good periodicity of the grown quantum cascade GaN/Al0.2Ga0.8N structure. MOCVD growth should be a viable technique for fabrication of AlGaN/GaN quantum cascade laser and phonon frequency shift should be a key indicator for the good periodicity of the grown QCL structure.
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    Effect of growth conditions on the Al composition and quality of AlGaN film
    (2007-01-15)
    Huang, G. S.
    ;
    Yao, H. H.
    ;
    Kuo, H. C.
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    Wang, S. C.
    ;
    光電工程學系
    Effects of growth conditions on Al composition and quality of AlxGa1-xN epilayer grown by low-pressure matelorganic vapor phase epitaxy (MOVPE) have been investigated. The dependences of Al composition, growth rate and quality on the NH3 flow rate, TMAl flow rate and growth temperature were studied. The Al composition and quality of AlxGa1-xN film depend not only on the TMAl flow rate, but also on the NH3 flow rate and on the growth temperature. The Al composition of AlxGa1-xN film becomes saturated when the gas-phase composition TMAl/(TMAl + TMGa) increases to 0.4, while quality of AlxGa1-xN film becomes much worse. The Al composition of AlxGa1-xN film increases with increase in the NH3 flow rate. The quality of AlxGa1-xN epilayer is improved when the growth temperature increases. Possible Al incorporation mechanism is discussed. (c) 2006 Elsevier B.V. All rights reserved.