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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Wang, S. J.Subject: search.filters.subject.HfSi

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    HfSiON n-MOSFETs using low-work function HfSi chi gate
    (2006-09-01)
    Wu, C. H.
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    Hung, B. F.
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    Chin, Albert
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    Wang, S. J.
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    Yen, F. Y.
    The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
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    Item type:Item,
    HtLaON n-MOSFETs using a low work function HfSix gate
    (2007-12-01)
    Cheng, C. F.
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    Wu, C. H.
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    Su, N. C.
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    Wang, S. J.
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    McAlister, S. P.
    At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm(2)/(V center dot s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degrees C rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines.