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Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YA
;
Chang, YH
;
Chu, JT
;
Tsai, MY
1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
A simple passive-alignment packaging technique for laser diode modules
(1998-10-01)
Wang, SC
;
Chi, S
;
Cheng, WH
;
光電工程研究所
;
Institute of EO Enginerring
A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
Efficient fibre-coupled laser diode end-pumped NYAB laser
(1996-08-01)
Chen, YF
;
Wang, SC
;
Kao, CF
;
Huang, TM
;
光電工程研究所
Under optimum pump conditions, 60mW of green laser output corresponding to a conversion efficiency 6% was obtained from a self-frequency-doubling NYAB crystal when pumped by a 1W fibre-coupled laser diode. The prospect of higher conversion efficiency is also discussed.
Investigation of fiber-coupled laser-diode-pumped NYAB green laser performance
(1996-10-01)
Chen, YF
;
Wang, SC
;
Kao, CF
;
Huang, TM
;
光電工程研究所
The optimum pump condition for a fiber-coupled diode end-pumped NYAB laser has been determined by including the effect of pump beam quality into the analysis. Under the optimum pump condition, 67 mW of the green laser output corresponding to a conversion efficiency 10.3% was obtained from a self frequency-doubling NYAB crystal when pumped by a 650 mW fiber-coupled laser diode. The prospect of higher conversion efficiency is also discussed.
Broad-band (>= 20 GHz) laser-diode-based optoelectronic microwave phase shifter
(1998-10-01)
Lin, GR
;
Hwang, TS
;
Chuang, YH
;
Wang, SC
;
Pan, CL
We demonstrate a new type of broad-band microwave phase shifter with superior performance at frequencies up to 20 GHz. This is implemented by simply adding an offset voltage prior to the loop filter (LF) in a laser-diode-based digital optoelectronic phase-locked loop (OEPLL), Accurate control of the phase of microwave signals with a continuously tunable range exceeding 640 degrees (similar to 3.6 pi) is achieved. The phase fluctuation and long-term drift of ally desired phase shift are as small as +/-0.4 degrees and 0.08 degrees, respectively, at 20 GHz, The relative phase instability can be maintained within 0.09 degrees while operating in a phase-shift-keying (PSK) scheme, We also demonstrate accurate control of relative phase difference between dual phase-locked microwave sources using the phase shifter. Our results indicate potential application of this broad-band optoelectronic phase shifter in a phased-array antenna system.
A simple passive-alignment packaging technique for laser diode modules
(1998-10-01)
Wang, SC
;
Chi, S
;
Cheng, WH
;
光電工程學系
;
Department of Photonics
A simple passive-alignment packaging technique has been developed for the fabrication of a laser diode connection to a singlemode fiber pigtail. The fabrication begins with a multimode fiber soldered in a U-groove with 5 mu m tolerance. Then the laser chip with a junction-up die-bond is passively aligned to a multimode fiber and converted into a singlemode fiber. The tolerance as measured for the multimode fiber at 10% loss of maximum coupling from the laser diode is 11 mu m. Because the tolerance of the multimode fiber from the laser chip is larger (11 mu m) than that of the fiber in the U-groove (5 mu m), this passive alignment is easily obtained. In contrast to other passive-alignment techniques, the advantages of this technique are that it is less sensitive to transverse misalignment and requires no complicated alignment marks. From laser to multimode fiber a coupling efficiency of greater than 80% and a bandwidth of greater than 1 GHz have been achieved. In this package, the overall coupling efficiency from laser to singlemode fiber is 16%, The resulting laser module with compact size and fewer components should make it highly suitable for use in low-cost telecommunication applications, (C) 1998 Elsevier Science S.A. All rights reserved.
Tunable semiconductor laser with liquid crystal pixel mirror in grating-loaded external cavity
(1999-08-19)
Pan, CL
;
Tsai, SH
;
Pan, RP
;
Sheu, CR
;
Wang, SC
The wavelength of a commercial red pointer laser diode has been tuned over 4nm digitally in 0.2nm steps with a folded telescopic gating loaded external cavity incorporating a liquid crystal pixel mirror. The sidemode-suppression ratio of the laser was better than 20dB throughout this range.
Frequency tracking and stabilization of a tunable dual-wavelength external-cavity diode laser
(1999-09-01)
Hsu, L
;
Chi, LC
;
Wang, SC
;
Pan, CL
;
電子物理學系
We show a unique dual-wavelength external-cavity laser diode with frequency tracking capability and obtain a stable beat frequency between the dual-wavelength output. By using a Fabry-Perot interferometer as the frequency discriminator and the time-gating technique in a servo loop, the peak-to-peak frequency fluctuations were stabilized, with respect to the Fabry-Perot cavity, to 86 kHz in the dual-wavelength output at 802.5 and 804.5 nm, and to 17 kHz in their 0.9 THz beat signal. Similar performance was achieved for tuning of the dual wavelength separation ranging from 0.2 to 4 nm. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

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