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Light emission characteristics of nonpolar a-plane GaN-based photonic crystal defect cavities
(2015-01-01)
Kao, Tsung Sheng
;
Wu, Tzeng-Tsong
;
Tsao, Che-Wei
;
Lin, Jyun-Hao
;
Lin, Da-Wei
In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence (mu-PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavities show high quality factor (Q) values in the light emission performance which can be up to 4.3x10(3). Moreover, the degree of polarization (DOP) of the light emission from the nonpolar GaN-based PC defect cavities was measured to achieve around 64 % along the m crystalline direction.
Room temperature lasing characteristics in metal-coated GaN spiral and grating structures
(2014)
Liao, Wei-Chun
;
Liao, Shu-Wei
;
Chen, Kuo-Ju
;
Shih, Min-Hsiung
;
Kuo, Hao-Chung
We had investigated a metal-coated GaN spiral structure laser at room temperature. The lasing action was observed around 363 nm wavelength with a low threshold power density. We also compare the lasing characteristics from metal-coated GaN spiral and grating structures. The experiment results ensure the circular-polarized emission from the metal-coated GaN spiral laser.
Lasing Characteristics of GaN-Based Photonic Quasi-Crystal Surface Emitting Lasers Operated at Higher Order Gamma Mode
(2015-11-01)
Hong, Kuo-Bin
;
Chen, Chih-Cheng
;
Lu, Tien-Chang
;
Wang, Shing-Chung
;
光電工程學系
In this study, GaN-based photonic quasi-crystal surface emitting lasers (PQCSELs) operated at different Gamma band-edge modes were fabricated and investigated. The photonic quasi-crystal patterns were defined by utilizing electron-beam lithography and inductively coupled plasma etching. Distinctive higher order Gamma band-edge lasing modes were identified in the GaN PQCSELs. The threshold energy density and lasing wavelength for the S3 band-edge mode were 4.6 mJ/cm(2) and 394.2 nm, respectively. The decreasing tendency of the threshold energy of PQCSEL was observed while the designed lasing mode moved from the higher Gamma band to the lower Gamma band. Numerical results showed that the S3 mode had the lower threshold and the threshold gain would be largely varied by tuning the ratio of air hole radius/lattice constant (r/a). Based on calculations and experiments, PQCSELs show the opportunity to realize lower threshold lasers than typical PC laser for specific value of r/a and appropriate higher order band-edge modes.
GaN-based surface-emitting lasers using high contrast grating
(2014)
Lu, Tien-Chang
;
Wang, Shing-Chung
;
Wu, Tzeng-Tsong
;
Wu, Shu-Hsien
;
Syu, Yu-Cheng
GaN-based surface-emitting lasers (SELs) using high contrast grating (HCG) with AlN/GaN distributed Bragg reflectors were reported. The laser device achieved a threshold energy density of about 0.56 mJ/cm(2) and the lasing wavelength was at 393.6 nm with a high degree of polarization of 73% at room temperature. The resonant mode and polarization characteristics matched to the theoretical prediction. GaN-based SELs using HCG supported by the Fano resonance can be potential for development of blue surface emitting laser sources
Localized Lasing Mode in GaN Quasi-Periodic Nanopillars at Room Temperature
(2013-07-01)
Wu, Tzeng-Tsong
;
Chen, Chih-Cheng
;
Chen, Hao-Wen
;
Lu, Tien-Chang
;
Wang, Shing-Chung
In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm(2) and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5 degrees and 3.6 mu m, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 x 10(-3). The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.
Fano resonances GaN-based high contrast grating surface-emitting lasers
(2013)
Wu, Tzeng-Tsong
;
Wu, Shu-Hsien
;
Lu, Tien-Chang
;
Kuo, Hao-Chung
;
Wang, Shing-Chung
GaN-based high contrast grating surface-emitting lasers (HCG SELs) with AlN/GaN distributed Bragg reflectors were reported. The device exhibited a low threshold pumping energy density of about 0.56 mJ/cm(2) and the lasing wavelength was at 393.6 nm with a high degree of polarization of 73% at room temperature. The specific lasing mode and polarization characteristics agreed well with the theoretical modeling. The low threshold characteristics of our GaN-based HCG SELs utilized by the Fano resonance can be potential for development of blue surface emitting laser sources
Room Temperature Current Injection Polariton Light Emitting Diode with a Hybrid Microcavity
(2011-07-01)
Lu, Tien-Chang
;
Chen, Jun-Rong
;
Lin, Shiang-Chi
;
Huang, Si-Wei
;
Wang, Shing-Chung
The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electro-dynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.
Output Power Enhancement of Light Emitting Diodes with Defect Passivation layer
(2010)
Lo, Ming-Hua
;
Tu, Po-Min
;
Cheng, Yuh-Jen
;
Wang, Chao-Hsun
;
Hung, Cheng-Wei
We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO(2) deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to similar to 4x10(7) cm(-2). The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.
Recent advances on CW current injection blue VCSELs
(2012)
Wang, Shing-Chung
;
Lu, Tien-Chang
;
Kuo, Hao-Chung
;
光電工程學系
;
Department of Photonics
The current injection GaN-based vertical cavity surface emitting lasers with hybrid mirrors have demonstrated the CW operation at room temperature. The laser hybrid cavity composes of a 29-pair high-reflectivity AlN/GaN bottom DBR, a 7-lamda cavity region, and a 10-pair SiO2/Ta2O5 dielectric DBR. The laser structure has utilized a thin ITO layer of 30 nm as the transparent conducting layer, combining with a thin heavily doped p-type InGaN contact layer to reduce the optical loss while maintaining good current spreading capability. The laser has typical emission wavelength around 412 nm with a threshold current of about 9.7 mA at room temperature. Further details of the laser design and performance characteristics are described.
GaN-based microcavity polariton light emitting diodes
(2012)
Lu, Tien-Chang
;
Lai, Ying-Yu
;
Huang, Si-Wei
;
Chen, Jun-Rong
;
Wu, Yung-Chi
Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature (RT). The hybrid microcavity structure consists of InGaN/GaN quantum wells sandwiched between bottom epitaxial DBR and top dielectric DBR. The anti-crossing behavior of polariton LED denotes a clear signature of the strong interaction between excitons and cavity photons.

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