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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wang, TahuiSubject: search.filters.subject.Electron lateral migration

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    Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
    (2017-01)
    Liu, Yu-Heng
    ;
    Jiang, Cheng-Min
    ;
    Chen, Wei-Chun
    ;
    Wang, Tahui
    ;
    Tsai, Wen-Jer
    We investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.
  • Thumbnail Image
    Item type:Item,
    Electric Field Induced Nitride Trapped Charge Lateral Migration in a SONOS Flash Memory
    (2017-01)
    Liu, Yu-Heng
    ;
    Jiang, Cheng-Min
    ;
    Chen, Wei-Chun
    ;
    Wang, Tahui
    ;
    Tsai, Wen-Jer
    We investigated electric field-induced trapped electron lateralmigration in a SONOS flash cell. The threshold voltage shift (Delta V-t) andgate-induceddrain leakage(GIDL) current were measured to monitor nitride electron movement in retention. We applied different voltages to the gate and the source/drain in retention to vary the vertical and lateral electric fields. Our study shows that: 1) GIDL current can be used tomonitor trapped charge lateralmigration and 2) nitride charge lateral migration exhibits strong dependence on the lateral electric field. Based on measured temperature and field dependence, a nitride trapped charge emission process via thermally assisted tunneling is proposed for electron lateral migration. The emission rates of thermally assisted tunneling, direct trap-to-band tunneling and Frenkel-Poole emission were compared.