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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Wang, TahuiSubject: search.filters.subject.RRAM

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Now showing 1 - 3 of 3
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    Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
    (2018-01-01)
    Su, P. C.
    ;
    Jiang, C. M.
    ;
    Wang, C. W.
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    Wang, Tahui
    ;
    電子工程學系及電子研究所
    The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.
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    Item type:Item,
    Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory
    (2016)
    Su, P. C.
    ;
    Chung, Y. T.
    ;
    Chen, M. C.
    ;
    Wang, Tahui
    ;
    電子工程學系及電子研究所
    Factors affecting SET-disturb failure time (tau(f)) in a tungsten oxide resistive switching memory including SET/RESET cycling stress, resistance window in operation and SET-disturb voltage are investigated. A SET-disturb failure time in high resistance state (HRS) may degrade by orders of magnitude in a post-cycling cell. The degradation is attributed to the formation of a current percolation path of cycling stress-generated traps. A one-dimensional percolation model is proposed for the tau(f) degradation. The dependence of tau(f) on resistance window in operation is characterized. We find that tau(f) is greatly affected by the current level of LRS. The strong LRS dependence of tf is attributed to a small Weibull slope of tau(f). In addition, we perform statistical characterizations of tau(f) at different SET-disturb voltages. A relationship between tau(f) and a SET-disturb voltage in a stressed cell is given.
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    Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching Memory
    (2015-02-01)
    Chung, Yueh-Ting
    ;
    Su, Po-Cheng
    ;
    Cheng, Yu-Hsuan
    ;
    Wang, Tahui
    ;
    Chen, Min-Cheng
    A new degradation mode with respect to write-disturb failure time due to SET/RESET cycling in a tungsten oxide resistive random access memory is reported. In a crossbar array memory, we find that a write-disturb failure time in high resistance state reduces suddenly by several orders of magnitude after certain SET/RESET cycles. This abrupt degradation is believed due to the creation of a new soft breakdown path in a switching dielectric by cycling stress. Although a memory window still remains after the degradation, the occurrence probability of over-SET state increases significantly. This cycling-induced degradation mode imposes a serious constraint on the number of SET-disturb pulses and thus an endurance cycle number in a resistive switching memory.