<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2009 - 200912010 - 20122

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wang, TahuiSubject: search.filters.subject.random telegraph noise (RTN)

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density
    (2012-04-01)
    Chen, Min-Cheng
    ;
    Lin, Chia-Yi
    ;
    Chen, Bo-Yuan
    ;
    Lin, Chang-Hsien
    ;
    Huang, Guo-Wei
    The behavior of random telegraph noise was affected by nickel silicide barrier height engineering in advanced nano-CMOS technologies. Contact resistance fluctuations with magnitude of up to 40% were observed when a Schottky barrier was reduced to 0.2 eV. The large contact resistance instability is attributed to the barrier modification by positive charge trapping and detrapping in a Schottky contact. The prevalence and magnitude of the noise are dependent on the contact area, trap density, trap energy, and the silicide Schottky barrier height. In this letter, we propose a fast method to extract the density of responsible contact traps.
  • Thumbnail Image
    Item type:Item,
    A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETs
    (2012-02-01)
    Chiu, J. P.
    ;
    Chung, Y. T.
    ;
    Wang, Tahui
    ;
    Chen, Min-Cheng
    ;
    Lu, C. Y.
    Random telegraph noise (RTN) and negative bias temperature (NBT) stress-induced threshold voltage (V-t) fluctuations in high-kappa gate dielectric and metal-gate pMOSFETs are investigated. We measured RTN amplitude distributions before and after NBT stress. RTN in poststressed devices exhibits a broader amplitude distribution than the prestress one. In addition, we trace a single trapped charge-induced Delta V-t in NBT stress and find that the average Delta V-t is significantly larger than a Delta V(t)caused by RTN. A 3-D atomistic simulation is performed to compare a single-charge-induced Delta V-t by RTN and NBTI. In our simulation, the probability distribution of a NBT trapped charge in the channel is calculated from the reaction-diffusion model. Our simulation confirms that the NBT-induced Delta V-t indeed has a larger distribution tail than RTN due to a current-path percolation effect.
  • Thumbnail Image
    Item type:Item,
    Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
    (2009-11-01)
    Ma, H. C.
    ;
    Chou, Y. L.
    ;
    Chiu, J. P.
    ;
    Wang, Tahui
    ;
    Ku, S. H.
    Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current level. A 3-D atomistic simulation is performed to calculate RTN amplitudes. Our result shows that the wide spread of program-state RTN amplitudes in a SONOS cell is attributed to a current-path-percolation effect caused by random discrete nitride charges.