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Author: search.filters.author.Wei, Hung-JuSubject: search.filters.subject.GaInP/GaAs HBT

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Now showing 1 - 4 of 4
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    Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
    (2007)
    Wei, Hung-Ju
    ;
    Meng, Chinchun
    ;
    Chang, YuWen
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2).
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    Item type:Item,
    A High-Speed HBT Prescaler Based on the Divide-by-Two Topology
    (2007)
    Wei, Hung-Ju
    ;
    Meng, Chinchun
    ;
    Chang, Yuwen
    ;
    Lin, Yi-Chen
    ;
    Huang, Guo-Wei
    This paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.
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    Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads
    (2008-02-01)
    Wei, Hung-Ju
    ;
    Meng, Chinchun
    ;
    Chang, Yuwen
    ;
    Huang, Guo-Wei
    ;
    電信工程研究所
    An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.
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    Item type:Item,
    Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun
    (2007)
    Wu, Tzung-Han
    ;
    Lin, Yi-Chen
    ;
    Meng, Chinchun
    ;
    Wu, Tse-Hung
    ;
    Wei, Hung-Ju
    A Gilbert micromixer is demonstrated in this paper using GaInP/GaAs HBT technology. The RF, LO, and IF ports of the micromixer are all single-ended using the on-chip active LO balun. The port-to-port isolation has its best performance when the LO signal is balanced. The stand-along micromixer is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of 12 dB, IP(1dB) of -9 dBm, IIP(3) of 1 dBm when input IF=300 MHz, LO=3.5 GHz and output RF=3.8 GHz.