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An Improved Manufacturing Yield Measure for Gold Bumping Processes With Very Low Nonconformities
(2019-05-01)
Wu, C. H.
;
Pearn, W. L.
;
Tai, Y. T.
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
Nowadays, thinner and slimmer smartphones have been widely applied in daily life. In most portable devices, liquid-crystal display driver integrated circuit (IC) or new touch display driver IC are critical components, in which the gold bumping process is used as an essential interconnection technology and usually outsources to out-sourced assembly and testing factories. In semiconductor packaging manufacturing, due to popular high-definition requirements of display devices, gold bumping processes require very low fraction of nonconformities. For this reason, accurately evaluating the manufacturing yield is very important to guarantee the quality requirements being met. To evaluate the yield of gold bumping processes, the most popular yield index C-pk is widely employed in outsourcing contract arrangements. However, the typical existing nature estimator is a biased estimator and more conservative. In this paper, we provide an unbiased estimator to evaluate the gold bumping manufacturing yield more accurately. Based on the new estimator, we further propose a weighted parametric bootstrap method to obtain a reliable lower confidence bound that is closer to the true manufacturing yield. The new yield assessment can avoid underestimating the gold bumping manufacturing yield and can make more reliable decisions.
Oxygen sensors made by monolayer graphene
(2012-01-01)
Hung, S. C.
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Chen, C. W.
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Yang, M. D.
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Yeh, C. W.
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Wu, C. H.
The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio.
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
(2013-01-14)
Shu, G. W.
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Lin, J. Y.
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Jian, H. T.
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Shen, J. L.
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Wang, S. C.
Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America
Enhancement of light emission in GaAs epilayers with graphene quantum dots
(2015-01-01)
Lin, T. N.
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Chih, K. H.
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Cheng, M. C.
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Yuan, C. T.
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Hsu, C. L.
A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml(-1). On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.
Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
(2010-11-01)
Chen, W. B.
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Wu, C. H.
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Shie, B. S.
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Chin, Albert
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電子工程學系及電子研究所
To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward\reverse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.
Loycal atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study
(2011-07-25)
Ray, S. C.
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Hsueh, H. C.
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Wu, C. H.
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Pao, C. W.
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Asokan, K.
This work investigates local atomic and electronic structures of PbZr0.52Ti0.48O3 (PZT) thin films with < 001 >, < 101 >, and < 111 > orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with theta = 0 degrees and 70 degrees incident angles. The EXAFS result indicates that the < 001 >-oriented PZT film has a polarization dominantly along the c-axis, while both < 101 >- and < 111 >-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the < 001 >-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607475]
Development of rapid and ultrasensitive flexible palladium nano-thin film biosensing electrode for V. Orientalis detection
(2018-12-01)
Wu, C. H.
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Huang, Y. Z.
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Chang, C. Y.
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Chang, C. H.
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生物科技學系
Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes
(2011-10-15)
Lin, J. Y.
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Chou, Y. T.
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Shen, J. L.
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Yang, M. D.
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Wu, C. H.
The structural properties of TiO2 nanotubes with rapid thermal annealing (RTA) and traditional thermal annealing in O-2 were studied by X-ray diffraction (XRD) and Raman scattering measurements. From analyzing the line width of XRD and the correlation length of the Raman peak, we demonstrate that RTA can be an effective tool for amorphous-anatase transformation in TiO2 nanotubes. The Raman peak redshifts and reduces its line width after thermal annealing and RTA, which may involves the reduction of oxygen-related defects. (C) 2011 Elsevier B. V. All rights reserved.
Local atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption study (vol 99, 042909, 2011)
(2011-11-28)
Ray, S. C.
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Hsueh, H. C.
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Wu, C. H.
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Pao, C. W.
;
Asokan, K.
Effect of Selenization Processes on CIGS Solar Cell Performance
(2018-07-01)
Wu, C. H.
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Wu, P. W.
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Chen, J. H.
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Kao, J. Y.
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Hsu, C. Y.
Cu(In, Ga)Se-2 (CIGS) films were fabricated by a two-step process method using sputtering from Cu0.7Ga0.3 and In targets. The metallic precursor structures of In/CuGa/In were prepared, and CuGa film was adjusted to the thicknesses of 150, 200, 250 and 300 nm, in order to optimize the CIGS film. After selenization, three independent CIGS (112), CIGS (220/204) and CIGS (312/116) began to crystallize at similar to 280 degrees C and phase peaks continued growing until 560 degrees C. Experimental results showed that with a single stage selenization method, the excessive stoichiometry of the CIGS films was obtained. Using three sequential stages for the selenization process, with a annealing time of 20 min, the stoichiometry of the CIGS absorbers with the Cu/(In + Ga) and Ga/(In + Ga) showed atomic ratios of 0.94 and 0.34, respectively. The intensity of the (112) XRD diffraction peak became stronger, indicating an improvement in the crystallinity. Raman spectra of CIGS absorbers showed a main peak (174 cm(-1)) and two weak signals (212 and 231 cm(-1)). TEM image for electron diffraction pattern showed that the grains were randomly oriented. CIGS solar cell device prepared with a proper selenization, a maximum efficiency of 12.45% was obtained.

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