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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Wu, CHSubject: search.filters.subject.MOSFET

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Now showing 1 - 3 of 3
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    Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
    (2003-12-01)
    Yu, DS
    ;
    Wu, CH
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Chen, WJ
    We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi1-xGex. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.
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    High work function IrxSi gates on HfAlON p-MOSFETs
    (2006-02-01)
    Wu, CH
    ;
    Yu, DS
    ;
    Chin, A
    ;
    Wang, SJ
    ;
    Li, MF
    We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line.
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    HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
    (2006-06-01)
    Wu, CH
    ;
    Hung, BF
    ;
    Chin, A
    ;
    Wang, SJ
    ;
    Yen, FY
    The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.