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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Wu, THSubject: search.filters.subject.HBT

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Now showing 1 - 3 of 3
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    DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
    (2004-03-20)
    Meng, CC
    ;
    Wu, TH
    ;
    Huang, GW
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-mum SiGe BiCMOS technology is reported. The SiGe HBT used here has f(t) of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1db and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. (C) 2004 Wiley Periodicals, Inc.
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    DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
    (2004-10-05)
    Meng, CC
    ;
    Wu, TH
    ;
    Lu, SS
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.
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    A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
    (2005-06-01)
    Wu, TH
    ;
    Meng, CC
    ;
    Wu, TH
    ;
    Huang, GW
    ;
    電信工程研究所
    This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.