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Author: search.filters.author.Wu, YCSSubject: search.filters.subject.amorphous silicon

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Now showing 1 - 3 of 3
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    Electroless plating with Pd induced crystallization of amorphous silicon thin films
    (2002-11-01)
    Hu, GR
    ;
    Wu, YCS
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    Chao, CW
    ;
    Huang, TJ
    ;
    材料科學與工程學系
    A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
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    Wafer bonding by Ni-induced crystallization of amorphous silicon
    (2003-09-01)
    Chao, CP
    ;
    Wu, YCS
    ;
    Lee, TL
    ;
    Wang, YH
    ;
    材料科學與工程學系
    Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.
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    Effects of tensile stress on growth of Ni-metal-induced lateral crystallization of amorphous silicon
    (2005-10-01)
    Hou, CY
    ;
    Wu, YCS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been used to fabricate low-temperature polycrystalline silicon thin-film transistors. Three stages have been identified in the NILC process: (1) the formation of NiSi(2), precipitates, (2) the nucleation of crystalline Si (c-Si) on NiSi(2) precipitates, and (3) the subsequent migration of NiSi(2) precipitates and growth of c-Si. In this study, a bending fixture was used to investigate the effects of tensile stress oil the growth of NILC. It was found that tensile stress did not enhance NiSi(2) formation and c-Si nucleation stages, but enhanced the c-Si growth stage. It was also found that compressive stress did not change NILC rate.